IRF7328TRPBF International Rectifier, IRF7328TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRF7328TRPBF
• Description: MOSFET 2P-CH 30V 8A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7328TRPBF

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 21 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 78nC @ 10V
• Input Capacitance (ciss) @ Vds: 2675pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Channel Type: P
• Current, Drain: -8 A
• Gate Charge, Total: 52 nC
• Package Type: SO-8
• Polarization: Dual P-Channel
• Power Dissipation: 2 W
• Resistance, Drain To Source On: 17 Milliohms
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 198 ns
• Time, Turn-on Delay: 13 ns
• Transconductance, Forward: 12 S
• Voltage, Breakdown, Drain To Source: -30 V
• Voltage, Drain To Source: -30 V
• Voltage, Forward, Diode: -1.2 V
• Voltage, Gate To Source: ±20 V
• Configuration: Dual
• Transistor Polarity: Dual P-Channel
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 8 A
• Mounting Style: SMD/SMT
• Gate Charge Qg: 52 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7328PBFTR; IRF7328TRPBF; IRF7328TRPBFTR

IRF7328PbF
4
4000
3000
2000
1000
100
0.1
10
Fig 5. Typical Capacitance Vs.
1
Fig 7. Typical Source-Drain Diode
0
0.2
1
Drain-to-Source Voltage
0.4
-V
C iss
C rss
C oss
-V
T = 150 C
SD
J
DS
Forward Voltage
,Source-to-Drain Voltage (V)
V
C
C
C
0.6
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
°
=
=
=
=
0V,
C
C
C
0.8
gs
gd
ds
+ C
+ C
10
1.0
f = 1MHz
gd ,
gd
T = 25 C
J
C
1.2
ds
°
V
SHORTED
GS
1.4
= 0 V
1.6
100
1000
100
14
12
10
Fig 8. Maximum Safe Operating Area
10
8
6
4
2
0
1
0.1
0
I =
Fig 6. Typical Gate Charge Vs.
D
T
T
Single Pulse
C
J
= 25 C °
= 150 C
-8A
OPERATION IN THIS AREA LIMITED
Gate-to-Source Voltage
-V
10
DS
Q , Total Gate Charge (nC)
G
°
, Drain-to-Source Voltage (V)
20
1
BY R
30
DS(on)
V
V
DS
DS
=-24V
=-15V
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40
10
50
100us
1ms
10ms
100
60