IRF7328TRPBF International Rectifier, IRF7328TRPBF Datasheet - Page 5

• Manufacturer Part Number: IRF7328TRPBF
• Description: MOSFET 2P-CH 30V 8A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7328TRPBF

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 21 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 8A
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 78nC @ 10V
• Input Capacitance (ciss) @ Vds: 2675pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Channel Type: P
• Current, Drain: -8 A
• Gate Charge, Total: 52 nC
• Package Type: SO-8
• Polarization: Dual P-Channel
• Power Dissipation: 2 W
• Resistance, Drain To Source On: 17 Milliohms
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 198 ns
• Time, Turn-on Delay: 13 ns
• Transconductance, Forward: 12 S
• Voltage, Breakdown, Drain To Source: -30 V
• Voltage, Drain To Source: -30 V
• Voltage, Forward, Diode: -1.2 V
• Voltage, Gate To Source: ±20 V
• Configuration: Dual
• Transistor Polarity: Dual P-Channel
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: - 8 A
• Mounting Style: SMD/SMT
• Gate Charge Qg: 52 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7328PBFTR; IRF7328TRPBF; IRF7328TRPBFTR

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1000
10.0
100
8.0
6.0
4.0
2.0
0.0
0.1
10
0.0001
1
Fig 9. Maximum Drain Current Vs.
25
D = 0.50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.20
0.10
0.05
0.02
0.01
50
Case Temperature
T , Case Temperature ( C)
T
C
A
(THERMAL RESPONSE)
0.001
SINGLE PULSE
75
100
0.01
t , Rectangular Pulse Duration (sec)
125
1
°
0.1
150
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
V
10%
90%
V
1
GS
DS
t
d(on)
1. Duty factor D = t / t
2. Peak T = P
Notes:
≤ 0.1 %
t
≤ 1
r
10
J
IRF7328PbF
DM
x Z
1
thJA
P
2
DM
t
d(off)
+ T
100
A
t
1
t
f
t
2
+
-
1000
5