IRF7902TRPBF International Rectifier, IRF7902TRPBF Datasheet - Page 10

• Manufacturer Part Number: IRF7902TRPBF
• Description: MOSFET DUAL N-CH 30V 9.7A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7902TRPBF

• Package / Case: 8-SOIC (3.9mm Width)
• Mounting Type: Surface Mount
• Power - Max: 1.4W, 2W
• Fet Type: 2 N-Channel (Dual)
• Gate Charge (qg) @ Vgs: 6.9nC @ 4.5V
• Vgs(th) (max) @ Id: 2.25V @ 25µA
• Current - Continuous Drain (id) @ 25° C: 6.4A, 9.7A
• Drain To Source Voltage (vdss): 30V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 22.6 mOhm @ 6.4A, 10V
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 18.7 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 9.7 A
• Power Dissipation: 2.0 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 4.6 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Notes:

‚
ƒ
SO-8 Tape and Reel
Dimensions are shown in milimeters (inches)
10
Repetitive rating; pulse width limited by max. junction
Pulse width ≤ 400µs; duty cycle ≤ 2%.
temperature.
Q2: L = 0.24mH, R
Starting T
J
= 25°C, Q1: L = 0.26mH, R
NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: [phone]
G
= 25Ω, I
AS
= 7.8A.
8.1 ( .318 )
7.9 ( .312 )
G
TERMINAL NUMBER 1
= 25Ω, I
(12.992)
330.00
MAX.
AS
= 5.1A;
This product has been designed and qualified for the Consumer market.
Visit us at www.irf.com for sales contact information. 07/2006
„
…
When mounted on 1 inch square copper board.
Data and specifications subject to change without notice.
θ
Qualification Standards can be found on IR’s Web site.
FEED DIRECTION
12.3 ( .484 )
11.7 ( .461 )
14.40 ( .566 )
12.40 ( .488 )
TAC Fax: [phone]
www.irf.com