IRF7902TRPBF International Rectifier, IRF7902TRPBF Datasheet - Page 7

• Manufacturer Part Number: IRF7902TRPBF
• Description: MOSFET DUAL N-CH 30V 9.7A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7902TRPBF

• Package / Case: 8-SOIC (3.9mm Width)
• Mounting Type: Surface Mount
• Power - Max: 1.4W, 2W
• Fet Type: 2 N-Channel (Dual)
• Gate Charge (qg) @ Vgs: 6.9nC @ 4.5V
• Vgs(th) (max) @ Id: 2.25V @ 25µA
• Current - Continuous Drain (id) @ 25° C: 6.4A, 9.7A
• Drain To Source Voltage (vdss): 30V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 22.6 mOhm @ 6.4A, 10V
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 18.7 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 9.7 A
• Power Dissipation: 2.0 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 4.6 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

www.irf.com
1000
0.01
0.01
100
100
0.1
0.1
10
10
1E-006
1
1E-006
1
Fig 26. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient (Q2)
Fig 25. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient (Q1)
D = 0.50
D = 0.50
0.05
0.02
0.01
0.10
0.05
0.02
0.01
0.20
0.10
0.20
1E-005
1E-005
SINGLE PULSE
( THERMAL RESPONSE )
SINGLE PULSE
( THERMAL RESPONSE )
0.0001
0.0001
0.001
0.001
t 1 , Rectangular Pulse Duration (sec)
t 1 , Rectangular Pulse Duration (sec)
Fig 27. Layout Diagram
τ
τ
J
J
0.01
0.01
τ
τ
J
τ
J
τ
1
Ci= τi/Ri
1
Ci= τi/Ri
τ
τ
1
1
Ci= τi/Ri
Ci= τi/Ri
R
R
1
R
1
R
1
1
0.1
0.1
τ
τ
2
2
R
τ
τ
R
2
2
2
R
2
R
2
2
R
τ
R
τ
3
3
3
3
R
τ
R
1
τ
1
3
3
3
3
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthja + Tc
τ
τ
R
4
R
4
τ
τ
4
R
4
4
R
4
4
4
τ
τ
A
10
A
10
τ
τ
Ri (°C/W)
2.445866 0.000118
9.382382 0.020778
33.63681
17.05217
Ri (°C/W)
3.031518 0.000064
7.306226 0.005879
51.39689
28.2607
100
100
0.70843
0.44864
τ
τ
i (sec)
12.37
24.5
i (sec)
1000
1000
7