IRF7902TRPBF International Rectifier, IRF7902TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRF7902TRPBF
• Description: MOSFET DUAL N-CH 30V 9.7A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7902TRPBF

• Package / Case: 8-SOIC (3.9mm Width)
• Mounting Type: Surface Mount
• Power - Max: 1.4W, 2W
• Fet Type: 2 N-Channel (Dual)
• Gate Charge (qg) @ Vgs: 6.9nC @ 4.5V
• Vgs(th) (max) @ Id: 2.25V @ 25µA
• Current - Continuous Drain (id) @ 25° C: 6.4A, 9.7A
• Drain To Source Voltage (vdss): 30V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 22.6 mOhm @ 6.4A, 10V
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 18.7 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 9.7 A
• Power Dissipation: 2.0 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 4.6 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig 9. Typical Gate Charge vs. Gate-to-Source Voltage
Fig 7. Typical Capacitance vs. Drain-to-Source Voltage Fig 8. Typical Capacitance vs. Drain-to-Source Voltage
4
10000
0.001
1000
1000
0.01
100
100
0.1
6.0
5.0
4.0
3.0
2.0
1.0
0.0
10
10
1
Fig 11. Maximum Safe Operating Area
1
0
0
T A = 25°C
Tj = 150°C
Single Pulse
I D = 5.1A
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
1
Q G , Total Gate Charge (nC)
V DS = 24V
V DS = 15V
V DS = 6.0V
OPERATION IN THIS AREA
LIMITED BY R DS (on)
Q1 - Control FET
1
2
C iss
C oss
C rss
f = 1 MHZ
10
3
100msec
10
4
5
100µsec
10msec
1msec
Typical Characteristics
100
100
6
Fig 10. Typical Gate Charge vs. Gate-to-Source
10000
0.001
1000
1000
0.01
100
100
0.1
6.0
5.0
4.0
3.0
2.0
1.0
0.0
10
10
1
Fig 12. Maximum Safe Operating Area
1
0
0
T A = 25°C
Tj = 150°C
Single Pulse
I D = 7.8A
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
V DS , Drain-to-Source Voltage (V)
1
V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Q2 - Synchronous FET
2
Voltage
OPERATION IN THIS AREA
LIMITED BY R DS (on)
V DS = 24V
V DS = 15V
V DS = 6.0V
1
C iss
C oss
C rss
3
f = 1 MHZ
10
4
100msec
5
10
6
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100µsec
10msec
1msec
7
100
100
8