IRF7902TRPBF International Rectifier, IRF7902TRPBF Datasheet - Page 5

• Manufacturer Part Number: IRF7902TRPBF
• Description: MOSFET DUAL N-CH 30V 9.7A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7902TRPBF

• Package / Case: 8-SOIC (3.9mm Width)
• Mounting Type: Surface Mount
• Power - Max: 1.4W, 2W
• Fet Type: 2 N-Channel (Dual)
• Gate Charge (qg) @ Vgs: 6.9nC @ 4.5V
• Vgs(th) (max) @ Id: 2.25V @ 25µA
• Current - Continuous Drain (id) @ 25° C: 6.4A, 9.7A
• Drain To Source Voltage (vdss): 30V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 22.6 mOhm @ 6.4A, 10V
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 18.7 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 9.7 A
• Power Dissipation: 2.0 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 4.6 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig 13. Normalized On-Resistance vs. Temperature
Fig 15. Typical Source-Drain Diode Forward Voltage
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Fig 17. Typical On-Resistance vs.Gate Voltage
100
2.0
1.5
1.0
0.5
0.1
10
60
50
40
30
20
10
1
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.2
2
I D = 6.4A
V GS = 10V
V GS, Gate -to -Source Voltage (V)
0.4
T J = 150°C
V SD , Source-to-Drain Voltage (V)
4
T J , Junction Temperature (°C)
0.6
6
Q1 - Control FET
0.8
T J = 25°C
8
T J = 25°C
1.0
10
T J = 125°C
1.2
12
V GS = 0V
I D = 6.4A
1.4
14
Typical Characteristics
1.6
16
Fig 16. Typical Source-Drain Diode Forward Voltage
Fig 14. Normalized On-Resistance vs. Temperature
Fig 18. Typical On-Resistance vs.Gate Voltage
100
0.1
2.0
1.5
1.0
0.5
10
40
30
20
10
1
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
0.2
2
I D = 9.7A
V GS = 10V
0.4
V GS, Gate -to -Source Voltage (V)
T J = 150°C
V SD , Source-to-Drain Voltage (V)
4
T J , Junction Temperature (°C)
Q2 - Synchronous FET
0.6
6
0.8
8
T J = 25°C
T J = 25°C
1.0
10
T J = 125°C
1.2
12
V GS = 0V
I D = 9.7A
1.4
14
1.6
16
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