IRF7902TRPBF International Rectifier, IRF7902TRPBF Datasheet - Page 2

• Manufacturer Part Number: IRF7902TRPBF
• Description: MOSFET DUAL N-CH 30V 9.7A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7902TRPBF

• Package / Case: 8-SOIC (3.9mm Width)
• Mounting Type: Surface Mount
• Power - Max: 1.4W, 2W
• Fet Type: 2 N-Channel (Dual)
• Gate Charge (qg) @ Vgs: 6.9nC @ 4.5V
• Vgs(th) (max) @ Id: 2.25V @ 25µA
• Current - Continuous Drain (id) @ 25° C: 6.4A, 9.7A
• Drain To Source Voltage (vdss): 30V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 22.6 mOhm @ 6.4A, 10V
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 18.7 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 9.7 A
• Power Dissipation: 2.0 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 4.6 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Static @ T
BV
∆ΒV
R
V
∆V
I
I
gfs
Q
Q
Q
R
t
t
t
t
C
C
C
Avalanche Characteristics
E
I
Diode Characteristics
I
I
V
t
Q
DSS
GSS
d(on)
r
d(off)
f
AR
S
SM
rr
GS(th)
AS
SD
DS(on)
G
iss
oss
rss
g
sw
oss
rr
Q
Q
Q
Q
GS(th)
DSS
2
gs1
gs2
gd
godr
DSS
/∆T
/∆T
J
J
J
= 25°C (unless otherwise specified)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Q
Output Charge
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Single Pulse Avalanche Energy
Avalanche Current
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Parameter
Ù
Parameter
Parameter
gs2
™
+ Q
gd
)
Q1&Q2
Q1&Q2
Q1&Q2
Q1&Q2
Q1&Q2
Q1&Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Q1
Q2
Min.
1.35
Min.
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
30
13
19
0.023
0.025
Typ.
18.1
23.8
11.5
14.9
Typ.
–––
-4.7
-5.9
–––
–––
–––
–––
–––
–––
580
900
130
190
–––
–––
–––
–––
–––
–––
1.8
4.6
6.5
0.9
1.4
0.5
0.8
1.8
2.3
1.4
2.0
2.3
3.1
3.0
4.4
3.1
3.1
7.4
6.1
8.6
8.2
3.3
7.8
1.5
3.1
8.2
8.4
3.4
74
86
12
Max.
Max.
Typ.
22.6
29.7
14.4
18.7
2.25
-100
–––
–––
–––
–––
–––
–––
–––
150
100
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.0
6.9
9.8
4.9
4.9
1.7
2.5
1.0
1.0
2.3
4.7
51
78
12
18
mV/°C
Units
Units
V/°C
mΩ
µA
nA
nC
nC
nC
ns
pF
ns
Ω
V
V
S
A
A
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
V
V
V
Q1
V
V
Q2
V
V
V
Q1
V
I
Q2
V
I
Clamped Inductive Load
V
V
ƒ = 1.0MHz
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
Q1 T
Q2 T
D
D
Q1 Max.
GS
GS
GS
GS
GS
DS
DS
DS
GS
GS
DS
DS
DS
GS
DS
GS
DS
DD
DD
GS
DS
J
J
= 5.1A
= 7.8A
= 25°C, I
= 25°C, I
3.4
5.1
= 0V, I
= 10V, I
= 4.5V, I
= 10V, I
= 4.5V, I
= V
= 24V, V
= 24V, V
= 20V
= -20V
= 15V, I
= 15V, I
= 15V
= 4.5V, I
= 15V
= 4.5V, I
= 16V, V
= 0V
= 15V
= 15V, V
= 15V, V
V
V
J
J
DD
DD
= 25°C, I
= 25°C, I
GS
= 15V, di/dt = 100A/µs
= 15V, di/dt = 100A/µs
, I
D
D
S
S
D
D
D
D
= 250µA
D
D
D
D
GS
GS
GS
GS
GS
Q2 Max.
= 5.1A, V
= 7.8A, V
= 25µA
Conditions
Conditions
= 5.1A
= 7.8A
= 6.4A
= 9.7A
= 5.1A
= 7.8A
= 5.1A
= 7.8A
= 0V
= 0V, T
= 0V
= 4.5V
= 4.5V
7.3
7.8
F
F
= 5.1A,
= 7.8A,
D
e
e
e
e
= 1mA
www.irf.com
GS
GS
J
= 125°C
= 0V
= 0V
Units
mJ
A
e
e
e
e