IRF7752TRPBF International Rectifier, IRF7752TRPBF Datasheet
IRF7752TRPBF
Specifications of IRF7752TRPBF
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IRF7752TRPBF Summary of contents
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... Low Profile (< 1.1mm) Available in Tape & Reel l Description ® HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex- tremely low on-resistance per silicon area. This benefit, combined with the ruggedized device design , that Inter- provides thedesigner national Rectifier is well known for, with an extremely efficient and reliable device for use in battery and load management ...
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IRF7752 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS Gate-to-Source ...
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PULSE WIDTH Tj = 25°C 0.01 0.01 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 100 T = 150 C ° ° J ...
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IRF7752 1400 1MHz iss 1200 rss oss ds gd 1000 C iss 800 600 C oss 400 ...
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T , Case Temperature ( C) C Fig 9. Maximum Drain Current Vs. Case Temperature 1000 100 D = 0.50 0.20 0.10 10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL ...
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IRF7752 0.080 0.060 0.040 4.6A 0.020 0.000 2.0 3.0 4.0 5.0 6.0 V GS, Gate -to -Source Voltage (V) Fig 11. Typical On-Resistance Vs. Gate Voltage Charge ...
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TSSOP-8 Package Outline IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 www.irf.com Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can ...