IRF7752TRPBF International Rectifier, IRF7752TRPBF Datasheet - Page 3

• Manufacturer Part Number: IRF7752TRPBF
• Description: MOSFET N-CH DUAL 30V 4.6A 8TSSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7752TRPBF

• Package / Case: 8-TSSOP
• Mounting Type: Surface Mount
• Power - Max: 1W
• Fet Type: 2 N-Channel (Dual)
• Gate Charge (qg) @ Vgs: 9nC @ 4.5V
• Vgs(th) (max) @ Id: 2V @ 250µA
• Current - Continuous Drain (id) @ 25° C: 4.6A
• Drain To Source Voltage (vdss): 30V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 4.6A, 10V
• Configuration: Dual
• Transistor Polarity: Dual N-Channel
• Resistance Drain-source Rds (on): 36 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 4.6 A
• Power Dissipation: 1 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 9 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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0.01
100
0.1
10
100
1
10
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
1
0.01
2.0
T = 150 C
J
2.3
V
V DS , Drain-to-Source Voltage (V)
GS
0.1
°
, Gate-to-Source Voltage (V)
2.7
T = 25 C
J
20µs PULSE WIDTH
Tj = 25°C
3.0
1
2.3V
°
V
20µs PULSE WIDTH
DS
3.3
= 15V
TOP
BOTTOM 2.3V
10
3.7
VGS
10.0V
5.0V
4.5V
3.3V
3.0V
2.7V
2.5V
4.0
100
100
0.1
10
1
2.0
1.5
1.0
0.5
0.0
0.01
-60 -40 -20
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
I =
D
4.6A
V DS , Drain-to-Source Voltage (V)
T , Junction Temperature ( C)
J
0.1
Vs. Temperature
0
20
20µs PULSE WIDTH
Tj = 150°C
40
1
2.3V
60
IRF7752
80 100 120 140 160
10
TOP
BOTTOM 2.3V
V
°
GS
=
10V
VGS
10.0V
5.0V
4.5V
3.3V
3.0V
2.7V
2.5V
3
100