IRF7750TRPBF International Rectifier, IRF7750TRPBF Datasheet - Page 5

• Manufacturer Part Number: IRF7750TRPBF
• Description: MOSFET P-CH DUAL 20V 4.7A 8TSSOP
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7750TRPBF

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 4.7A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 4.7A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 39nC @ 5V
• Input Capacitance (ciss) @ Vds: 1700pF @ 15V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: 8-TSSOP
• Configuration: Dual
• Transistor Polarity: Dual P-Channel
• Drain-source Breakdown Voltage: - 20 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: - 4.7 A
• Power Dissipation: 1 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 26 nC
• Module Configuration: Dual
• Continuous Drain Current Id: 4.7A
• Drain Source Voltage Vds: -20V
• On Resistance Rds(on): 30mohm
• Rds(on) Test Voltage Vgs: -4.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7750TRPBF; IRF7750TRPBFTR

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1000
100
0.1
10
0.00001
1
Fig 9. Maximum Drain Current Vs.
5.0
4.0
3.0
2.0
1.0
0.0
D = 0.50
25
Fig 11. Typical Effective Transient Thermal Impedance, Junction-to-Ambient
0.20
0.10
0.05
0.02
0.01
Case Temperature
50
T , Case Temperature ( C)
C
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
75
100
0.001
t , Rectangular Pulse Duration (sec)
125
°
1
0.01
150
20
16
12
8
4
0
0.01
0.1
1. Duty factor D = t / t
2. Peak T = P
0.10
Notes:
Typical Power Vs. Time
1
J
Time (sec)
DM
1.00
x Z
1
thJA
P
2
DM
+ T
10
10.00
A
t
1
t
2
100.00
100
5