BSO615C G Infineon Technologies, BSO615C G Datasheet - Page 11

• Manufacturer Part Number: BSO615C G
• Description: MOSFET N/P-CH 60V 3.1A/2A 8SOIC
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSO615C G

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 110 mOhm @ 3.1A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 3.1A, 2A
• Vgs(th) (max) @ Id: 2V @ 20µA
• Gate Charge (qg) @ Vgs: 22.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 380pF @ 25V
• Power - Max: 2W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Configuration: Dual Dual Drain
• Transistor Polarity: N and P-Channel
• Resistance Drain-source Rds (on): 110 m Ohms / 300 m Ohms
• Drain-source Breakdown Voltage: + 60 V / - 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3.1 A, - 2 A
• Power Dissipation: 2 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Package: SO-8
• Vds (max): 60.0 V-60.0 V
• Id (max): 3.1 A-2.0 A
• Idpuls (max): 12.4 A-8.0 A
• Rds (on) (max) (@10v): 110.0 mOhm300.0 mOhm
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BSO615C; BSO615C G; BSO615CGT; BSO615CGXT; BSO615CINTR; SP000216311

Avalanche Energy E
parameter: I
R
Typ. gate charge (N-Ch.)
V
parameter: I
GS
GS
mJ
V
= f ( Q
50
40
35
30
25
20
15
10
16
12
10
= 25
5
0
8
6
4
2
0
25
0
BSO 615 C
2
W
45
Gate
D
D
4
0,2
= 3.1 A , V
= 3.1 A
)
65
V
6
DS max
8
85
AS
10
= f ( T
105
DD
12
= 25 V
14
j
125
) (N-Ch.)
0,8
16
V
Rev. 2.0
°C
DS max
nC
Q
T
j
Gate
165
20
Page 11
Avalanche Energy E
parameter: I
R
Typ. gate charge (P-Ch.)
V
parameter: I
GS
GS
mJ
-16
-12
-10
V
80
60
50
40
30
20
10
= f ( Q
= 25
-8
-6
-4
-2
0
0
25
0
BSO 615 C
2
W
45
Gate
D
D
4
= -2 A , V
= -2 A
0,2
)
65
V
6
DS max
8
85
AS
10
DD
= f ( T
105
12
= -25 V
BSO 615 C G
j
14
125
)
0,8
2006-08-25
16 nC
V
°C
DS max
Q
T
Gate
j
165
20