IRF7504TR International Rectifier, IRF7504TR Datasheet - Page 2

• Manufacturer Part Number: IRF7504TR
• Description: MOSFET 2P-CH 20V 1.7A MICRO8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7504TR

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 270 mOhm @ 1.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.7A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 8.2nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 240pF @ 15V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: Micro8™
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Source-Drain Ratings and Characteristics
IRF7504
Electrical Characteristics @ T
Notes:
V
R
V
g
I
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
t
I
SM
on
DSS
GSS
d(on)
r
d(off)
f
S
rr
V
fs
(BR)DSS
DS(ON)
GS(th)
iss
oss
rss
SD
g
gs
gd
rr
T
Repetitive rating; pulse width limited by
(BR)DSS
max. junction temperature. ( See fig. 11 )
J
150°C
-1.2A, di/dt
/ T
J
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain-to-Source Leakage Current
Gate-to-Source Reverse Leakage
100A/µs, V
Parameter
Parameter
DD
V
(BR)DSS
J
= 25°C (unless otherwise specified)
,
-0.70 –––
Pulse width
Surface mounted on FR-4 board, t
Min. Typ. Max. Units
Min. Typ. Max. Units
–––
–––
–––
–––
––– 0.96
–––
–––
–––
–––
–––
–––
–––
–––
––– -0.012 –––
–––
–––
–––
–––
–––
–––
–––
–––
-20
1.3
Intrinsic turn-on time is negligible (turn-on is dominated by L
–––
–––
–––
–––
–––
–––
––– -100
–––
240
130
––– -1.25
–––
–––
2.4
5.4
9.1
64
35
38
43
52
63
0.27
0.40
-1.0
-9.6
-1.2
–––
–––
–––
100
–––
–––
–––
–––
–––
–––
–––
1.4
-25
8.2
3.6
78
95
300µs; duty cycle
V/°C
nC
nC
µA
nA
ns
pF
ns
A
V
V
S
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz, See Fig. 5
MOSFET symbol
showing the
p-n junction diode.
T
T
di/dt = 100A/µs
integral reverse
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= -1.2A
= -1.2A
= 25°C, I
= 25°C, I
= 6.0
= 8.3
= 0V, I
= -4.5V, I
= -2.7V, I
= V
= -10V, I
= -16V, V
= -16V, V
= -16V
= -4.5V, See Fig. 6 and 9
= -10V
= 0V
= -15V
= -12V
= +12V
2%.
GS
, I
10sec.
D
See Fig. 10
S
F
D
Conditions
= -250µA
D
= -1.2A
= -1.2A, V
D
D
GS
GS
= -250µA
= -0.60A
= -1.2A
= -0.60A
= 0V
= 0V, T
Conditions
D
= -1mA
GS
J
= 125°C
= 0V
S
+L
D
)
G
S
D