IRF7504TR International Rectifier, IRF7504TR Datasheet - Page 4

• Manufacturer Part Number: IRF7504TR
• Description: MOSFET 2P-CH 20V 1.7A MICRO8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7504TR

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 270 mOhm @ 1.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.7A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 8.2nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 240pF @ 15V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: Micro8™
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRF7504
0 . 0 1
0 . 1
1 0
5 0 0
4 0 0
3 0 0
2 0 0
1 0 0
1
0 . 4
Fig 7. Typical Source-Drain Diode
0
1
Fig 5. Typical Capacitance Vs.
T = 15 0°C
J
C
C
-V
C
Drain-to-Source Voltage
rs s
-V
is s
o s s
S D
D S
Forward Voltage
0 . 6
, S ource-to-Drain V oltage (V )
V
C
C
C
, D rain-to-S ource V oltage (V)
G S
iss
rs s
os s
= 0V ,
= C
= C
= C
gs
g d
ds
T = 25 °C
0 . 8
J
+ C
+ C
1 0
gd
gd
f = 1 MH z
, C
ds
1 . 0
SH O R TED
V
G S
= 0 V
1 . 2
1 0 0
A
A
1 0 0
0 . 1
1 0
1 0
8
6
4
2
0
1
Fig 8. Maximum Safe Operating Area
0
1
T
T
S ing le Pulse
I
V
D
A
J
D S
Fig 6. Typical Gate Charge Vs.
= -1 .2A
= 25 °C
= 15 0°C
= -1 6V
OPE R ATIO N IN TH IS A RE A LIMITE D
-V
Gate-to-Source Voltage
D S
Q , Total G ate C harge (nC)
2
G
, D rain-to-S ource Voltage (V )
4
BY R
1 0
D S(o n)
FOR TE ST C IR C U IT
6
SE E FIG U R E 9
1 00µs
1m s
10m s
8
1 0 0
1 0
A
A