IRF7504TR International Rectifier, IRF7504TR Datasheet - Page 5

• Manufacturer Part Number: IRF7504TR
• Description: MOSFET 2P-CH 20V 1.7A MICRO8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7504TR

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 270 mOhm @ 1.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.7A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 8.2nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 240pF @ 15V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: Micro8™
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Fig 9a. Basic Gate Charge Waveform
Fig 9b. Gate Charge Test Circuit
-4.5V
1000
100
0.1
10
0.00001
1
V
12V
G
V
D = 0.50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
GS
Same Type as D.U.T.
0.20
0.10
0.05
0.02
0.01
Q
Current Regulator
GS
.2 F
50K
-3mA
(THERMAL RESPONSE)
0.0001
Current Sampling Resistors
.3 F
SINGLE PULSE
Q
Charge
Q
I
GD
G
G
D.U.T.
I
D
0.001
+
-
V
t , Rectangular Pulse Duration (sec)
DS
1
0.01
0.1
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
V
10%
90%
V
GS
DS
1. Duty factor D =
2. Peak T
Notes:
R
Pulse Width
Duty Factor
G
t
d(on)
-4.5V
V
1
J
GS
= P
DM
V
t
r
DS
x Z
t / t
1
µs
thJA
P
2
DM
+ T
10
A
t
D.U.T.
1
t
2
R
t
D
d(off)
IRF7504
t
100
f
+
-
V
DD