IRF7504TR International Rectifier, IRF7504TR Datasheet - Page 6

• Manufacturer Part Number: IRF7504TR
• Description: MOSFET 2P-CH 20V 1.7A MICRO8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7504TR

• Fet Type: 2 P-Channel (Dual)
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 270 mOhm @ 1.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 1.7A
• Vgs(th) (max) @ Id: 700mV @ 250µA
• Gate Charge (qg) @ Vgs: 8.2nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 240pF @ 15V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: Micro8™
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRF7504
V
GS
Re-Applied
Voltage
*
Reverse
Recovery
Current
*
** Use P-Channel Driver for P-Channel Measurements
Reverse Polarity for P-Channel
+
-
R
D.U.T
G
***
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
V
GS
P.W.
SD
DS
= 5.0V for Logic Level and 3V Drive Devices
Peak Diode Recovery dv/dt Test Circuit
Waveform
Waveform
Fig 12. For P-Channel HEXFETS
Ripple
Body Diode
Period
**
Body Diode Forward
+
-
dv/dt controlled by R
I
D.U.T. - Device Under Test
Diode Recovery
5%
SD
Current
controlled by Duty Factor "D"
Circuit Layout Considerations
dv/dt
Forward Drop
di/dt
Current Transformer
Ground Plane
Low Stray Inductance
Low Leakage Inductance
D =
-
G
Period
P.W.
+
[
[
[
V
V
I
SD
GS
DD
]
]
=10V
+
-
V
] ***
DD
*