IRF7509TR International Rectifier, IRF7509TR Datasheet

IRF7509TR

Manufacturer Part Number

IRF7509TR

Description

MOSFET N+P 30V 2A MICRO8

Manufacturer

International Rectifier

Series

HEXFET®r

Datasheet

1.IRF7509TR.pdf (8 pages)

Specifications of IRF7509TR

Fet Type

N and P-Channel

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

110 mOhm @ 1.7A, 10V

Drain To Source Voltage (vdss)

30V

Current - Continuous Drain (id) @ 25° C

2.7A, 2A

Vgs(th) (max) @ Id

1V @ 250µA

Gate Charge (qg) @ Vgs

12nC @ 10V

Input Capacitance (ciss) @ Vds

210pF @ 25V

Power - Max

1.25W

Mounting Type

Surface Mount

Package / Case

Micro8™

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Meier Automation Equipment Co., Limited

Part Number:

IRF7509TRPBF

Manufacturer:

Quantity:

20 000

Company:

H&T Electronics

Part Number:

IRF7509TRPBF

Quantity:

9 000

Company:

H&T Electronics

Part Number:

IRF7509TRPBF

Quantity:

8 000

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Description

Fifth

processing techniques to achieve extremely low on-resistance per silicon

area. This benefit, combined with the fast switching speed and ruggedized

device design that HEXFET Power MOSFETs are well known for, provides the

designer with an extremely efficient and reliable device for use in a wide variety

of applications.

The new Micro8 package, with half the footprint area of the standard SO-8,

provides the smallest footprint available in an SOIC outline. This makes the

Micro8 an ideal device for applications where printed circuit board space is at

a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into

extremely thin application environments such as portable electronics and

PCMCIA cards.

Absolute Maximum Ratings

Thermal Resistance

www.irf.com

dv/dt

GSM

@ T

, T

Generation V Technology

Ultra Low On-Resistance

Dual N and P Channel MOSFET

Very Small SOIC Package

Low Profile (<1.1mm)

Available in Tape & Reel

Fast Switching

STG

Generation HEXFETs from International Rectifier utilize advanced

= 25°C

= 70°C

= 25°C

= 70°C

Maximum Junction-to-Ambient

Drain-Source Voltage

Continuous Drain Current, V

Pulsed Drain Current

Maximum Power Dissipation

Peak Diode Recovery dv/dt

Junction and Storage Temperature Range

Soldering Temperature, for 10 seconds

Linear Derating Factor

Gate-to-Source Voltage

Gate-to-Source Voltage Single Pulse tp<10µS

Parameter

G 2

G 1

S 2

S 1

N-C HANNE L M O S F E T

P -C HANNE L M O S F E T

T op V ie w

N-Channel

2.7

2.1

HEXFET

240 (1.6mm from case)

D 1

D 2

-55 to + 150

Max.

100

Max.

1.25

± 20

0.8

5.0

DS(on)

DSS

IRF7509

P-Channel

Power MOSFET

-30

-2.0

-1.6

-16

M icro 8

PD - 91270J

0.11

N-Ch

30V

mW/°C

0.20

Units

°C/W

P-Ch

-30V

V/ns

°C

12/1/98

Related parts for IRF7509TR

IRF7509TR Summary of contents

Page 1

... Fast Switching Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...

Page 2

IRF7509 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS I ...

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IRF7509TR International Rectifier, IRF7509TR Datasheet

IRF7509TR

Specifications of IRF7509TR

Available stocks

Related parts for IRF7509TR

IRF7509TR Summary of contents

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