IRF7509TR International Rectifier, IRF7509TR Datasheet

MOSFET N+P 30V 2A MICRO8

IRF7509TR

Manufacturer Part Number
IRF7509TR
Description
MOSFET N+P 30V 2A MICRO8
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF7509TR

Fet Type
N and P-Channel
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
110 mOhm @ 1.7A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2.7A, 2A
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
12nC @ 10V
Input Capacitance (ciss) @ Vds
210pF @ 25V
Power - Max
1.25W
Mounting Type
Surface Mount
Package / Case
Micro8™
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
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Description
Fifth
processing techniques to achieve extremely low on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The new Micro8 package, with half the footprint area of the standard SO-8,
provides the smallest footprint available in an SOIC outline. This makes the
Micro8 an ideal device for applications where printed circuit board space is at
a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into
extremely thin application environments such as portable electronics and
PCMCIA cards.
Absolute Maximum Ratings
Thermal Resistance
www.irf.com
V
I
I
I
P
P
V
V
dv/dt
T
R
D
D
DM
J
DS
D
D
GS
GSM
@ T
@ T
JA
, T
Generation V Technology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
Fast Switching
@T
@T
STG
Generation HEXFETs from International Rectifier utilize advanced
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
Maximum Junction-to-Ambient
Drain-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Peak Diode Recovery dv/dt
Junction and Storage Temperature Range
Soldering Temperature, for 10 seconds
Linear Derating Factor
Gate-to-Source Voltage
Gate-to-Source Voltage Single Pulse tp<10µS
Parameter
Parameter
GS
GS
G 2
G 1
S 2
S 1
N-C HANNE L M O S F E T
P -C HANNE L M O S F E T
1
2
3
4
T op V ie w
N-Channel
2.7
2.1
30
21
8
6
5
7
HEXFET
240 (1.6mm from case)
D 1
D 1
D 2
D 2
-55 to + 150
Max.
100
Max.
1.25
± 20
10
0.8
5.0
30
R
®
V
DS(on)
DSS
IRF7509
P-Channel
Power MOSFET
-30
-2.0
-1.6
-16
M icro 8
PD - 91270J
0.11
N-Ch
30V
mW/°C
0.20
Units
Units
°C/W
P-Ch
-30V
V/ns
V
V
°C
W
W
V
A
1
12/1/98

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IRF7509TR Summary of contents

Page 1

... Fast Switching Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...

Page 2

IRF7509 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS I ...

Page 3

VGS TOP 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3. 20µ 25°C J 0.1 0 rain-to-Sourc e Voltage (V ...

Page 4

IRF7509 0.140 0.120 ID = 2.7A 0.100 0.080 0.060 Gate-to-Source Voltage (V) GS Fig 7. Typical On-Resistance Vs. Gate Voltage 400 ...

Page 5

VGS TOP - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V 1 -3.0 V 20µ °C J 0.1 0.1 ...

Page 6

IRF7509 /5 Fig 17. Typical On-Resistance Vs. Gate Voltage 400 ...

Page 7

Package Outline Micro8 Outline Dimensions are shown in millimeters (inches 0.08 ...

Page 8

IRF7509 Tape & Reel Information Micro8 Dimensions are shown in millimeters (inches & E ...

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