MOSFET N+P 30V 2A MICRO8

IRF7509TR

Manufacturer Part NumberIRF7509TR
DescriptionMOSFET N+P 30V 2A MICRO8
ManufacturerInternational Rectifier
SeriesHEXFET®
IRF7509TR datasheet
 

Specifications of IRF7509TR

Fet TypeN and P-ChannelFet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs110 mOhm @ 1.7A, 10VDrain To Source Voltage (vdss)30V
Current - Continuous Drain (id) @ 25° C2.7A, 2AVgs(th) (max) @ Id1V @ 250µA
Gate Charge (qg) @ Vgs12nC @ 10VInput Capacitance (ciss) @ Vds210pF @ 25V
Power - Max1.25WMounting TypeSurface Mount
Package / CaseMicro8™Lead Free Status / RoHS StatusContains lead / RoHS non-compliant
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Next
Generation V Technology
Ultra Low On-Resistance
Dual N and P Channel MOSFET
Very Small SOIC Package
Low Profile (<1.1mm)
Available in Tape & Reel
Fast Switching
Description
Fifth
Generation HEXFETs from International Rectifier utilize advanced
processing techniques to achieve extremely low on-resistance per silicon
area. This benefit, combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety
of applications.
The new Micro8 package, with half the footprint area of the standard SO-8,
provides the smallest footprint available in an SOIC outline. This makes the
Micro8 an ideal device for applications where printed circuit board space is at
a premium. The low profile (<1.1mm) of the Micro8 will allow it to fit easily into
extremely thin application environments such as portable electronics and
PCMCIA cards.
Absolute Maximum Ratings
Parameter
V
Drain-Source Voltage
DS
I
@ T
= 25°C
Continuous Drain Current, V
D
A
I
@ T
= 70°C
Continuous Drain Current, V
D
A
I
Pulsed Drain Current
DM
P
@T
= 25°C
Maximum Power Dissipation
D
A
P
@T
= 70°C
Maximum Power Dissipation
D
A
Linear Derating Factor
V
Gate-to-Source Voltage
GS
V
Gate-to-Source Voltage Single Pulse tp<10µS
GSM
dv/dt
Peak Diode Recovery dv/dt
T
, T
Junction and Storage Temperature Range
J
STG
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
R
Maximum Junction-to-Ambient
JA
www.irf.com
HEXFET
N-C HANNE L M O S F E T
1
8
D 1
S 1
2
7
G 1
D 1
3
6
S 2
D 2
4
5
G 2
D 2
P -C HANNE L M O S F E T
T op V ie w
N-Channel
30
2.7
GS
2.1
GS
21
-55 to + 150
240 (1.6mm from case)
PD - 91270J
IRF7509
®
Power MOSFET
N-Ch
P-Ch
V
30V
-30V
DSS
R
0.11
0.20
DS(on)
M icro 8
Max.
Units
P-Channel
-30
V
-2.0
-1.6
A
-16
1.25
W
0.8
W
10
mW/°C
± 20
V
30
V
5.0
V/ns
°C
Max.
Units
100
°C/W
1
12/1/98

IRF7509TR Summary of contents

  • Page 1

    ... Fast Switching Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications ...

  • Page 2

    IRF7509 Electrical Characteristics @ T Parameter V Drain-to-Source Breakdown Voltage (BR)DSS Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(ON) V Gate Threshold Voltage GS(th) g Forward Transconductance fs I Drain-to-Source Leakage Current DSS I ...

  • Page 3

    VGS TOP 15V 10V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3. 20µ 25°C J 0.1 0 rain-to-Sourc e Voltage (V ...

  • Page 4

    IRF7509 0.140 0.120 ID = 2.7A 0.100 0.080 0.060 Gate-to-Source Voltage (V) GS Fig 7. Typical On-Resistance Vs. Gate Voltage 400 ...

  • Page 5

    VGS TOP - 15V - 10V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V 1 -3.0 V 20µ °C J 0.1 0.1 ...

  • Page 6

    IRF7509 /5 Fig 17. Typical On-Resistance Vs. Gate Voltage 400 ...

  • Page 7

    Package Outline Micro8 Outline Dimensions are shown in millimeters (inches 0.08 ...

  • Page 8

    IRF7509 Tape & Reel Information Micro8 Dimensions are shown in millimeters (inches & E ...