IRF7509TR International Rectifier, IRF7509TR Datasheet - Page 6

• Manufacturer Part Number: IRF7509TR
• Description: MOSFET N+P 30V 2A MICRO8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7509TR

• Fet Type: N and P-Channel
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 110 mOhm @ 1.7A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 2.7A, 2A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 12nC @ 10V
• Input Capacitance (ciss) @ Vds: 210pF @ 25V
• Power - Max: 1.25W
• Mounting Type: Surface Mount
• Package / Case: Micro8™
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRF7509
Fig 17. Typical On-Resistance Vs. Gate
6
Fig 19. Typical Capacitance Vs.
400
300
200
100
0
1
Drain-to-Source Voltage
Fig 21. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
C
C
C
-V
is s
o s s
rs s
/5
D S
V
C
C
C
, D rain-to-S ourc e V oltage (V )
G S
is s
rs s
os s
1000
100
0.1
10
0.00001
= 0 V ,
= C
= C
= C
1
Voltage
D = 0.50
gs
g d
ds
0.20
0.10
0.05
0.02
0.01
+ C
+ C
10
gd
gd
f = 1M H z
, C
(THERMAL RESPONSE)
0.0001
d s
SINGLE PULSE
S H O R TE D
100
0.001
A
t , Rectangular Pulse Duration (sec)
1
N-P - Channel
P - Channel
0.01
0.1
Fig 18. Maximum Safe Operating Area
100
0.1
10
20
16
12
1. Duty factor D = t / t
2. Peak T = P
Notes:
1
Fig 20. Typical Gate Charge Vs.
8
4
0
1
0
T
T
Single Pulse
I
C
J
D
= 25 C
= 150 C
= -1 .2A
1
J
OPERATION IN THIS AREA LIMITED
-V
Gate-to-Source Voltage
DS
2
°
Q , Total G ate C harge (nC )
DM
°
, Drain-to-Source Voltage (V)
G
x Z
1
thJA
4
P
2
DM
BY R
V
V
+ T
10
DS
DS
A
t
10
1
DS(on)
6
= -2 4V
= -1 5V
t
2
F O R T E S T C IR C U IT
S E E FIG U R E 9
8
10us
100us
1ms
10ms
100
www.irf.com
10
100
12
A