IRF7530TR International Rectifier, IRF7530TR Datasheet - Page 2

• Manufacturer Part Number: IRF7530TR
• Description: MOSFET 2N-CH 20V 5.4A MICRO8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7530TR

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 30 mOhm @ 5.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.4A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1310pF @ 15V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: Micro8™
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Electrical Characteristics @ T
Source-Drain Ratings and Characteristics

V
∆V
V
g
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
Notes:
‚
R
I
S
SM
rr
d(on)
r
d(off)
f
DSS
fs
GSS
2
(BR)DSS
GS(th)
SD
iss
oss
rss
g
gs
gd
rr
DS(on)
(BR)DSS
Repetitive rating; pulse width limited by
max. junction temperature.
Pulse width ≤ 400µs; duty cycle ≤ 2%
/∆T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
Parameter
Parameter
J
= 25°C (unless otherwise specified)
ƒ
„
When mounted on 1 inch square copper board, t<10 sec
Min. Typ. Max. Units
R
Min. Typ. Max. Units
0.60 –––
Starting T
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 1310 –––
–––
–––
–––
–––
–––
20
13
G
= 25Ω, I
0.01
–––
––– 0.030
––– 0.045
–––
–––
–––
–––
–––
180
150
–––
3.4
3.4
8.5
18
11
36
16
19
13
J
= 25°C, L = 2.6mH
AS
-100
–––
–––
–––
100
–––
–––
–––
–––
–––
–––
1.2
1.0
5.1
5.1
40
1.2
1.3
25
26
29
20
= 5.0A. (See Figure 10)
V/°C
nC
nC
pF
ns
V
S
V
Ω
V
MOSFET symbol
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz
showing the
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
= 5.4A
= 1.0A
= 25°C, I
= 25°C, I
= 6.0Ω
= 10Ω
= V
= 16V, V
= 16V, V
= 16V
= 15V
= 0V, I
= 4.5V, I
= 2.5V, I
= 10V, I
= 12V
= -12V
= 4.5V
= 10V
= 0V
GS
Conditions
, I
D
‚
S
F
D
D
‚
Conditions
GS
= 250uA
D
D
GS
= 1.3A, V
= 1.3A
= 250µA
= 5.4A
= 5.4A
= 4.6A
‚
= 0V
= 0V, T
D
www.irf.com
= 1mA
‚
‚
GS
J
= 70°C
= 0V
G
‚
D
S