IRF7530TR International Rectifier, IRF7530TR Datasheet - Page 3

• Manufacturer Part Number: IRF7530TR
• Description: MOSFET 2N-CH 20V 5.4A MICRO8
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7530TR

• Fet Type: 2 N-Channel (Dual)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 30 mOhm @ 5.4A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 5.4A
• Vgs(th) (max) @ Id: 1.2V @ 250µA
• Gate Charge (qg) @ Vgs: 26nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1310pF @ 15V
• Power - Max: 1.3W
• Mounting Type: Surface Mount
• Package / Case: Micro8™
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

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100
100
10
Fig 3. Typical Transfer Characteristics
10
Fig 1. Typical Output Characteristics
2.0
0.1
TOP
BOTTOM
V
V
DS
VGS
7.00V
5.00V
4.50V
3.50V
3.00V
2.70V
2.50V
2.25V
2.5
GS
T = 25 C
, Drain-to-Source Voltage (V)
J
, Gate-to-Source Voltage (V)
1
°
3.0
2.25V
V
20µs PULSE WIDTH
3.5
20µs PULSE WIDTH
T = 25 C
DS
J
T = 150 C
J
= 15V
10
°
4.0
°
4.5
100
Fig 2. Typical Output Characteristics
100
2.0
1.5
1.0
0.5
0.0
10
Fig 4. Normalized On-Resistance
0.1
-60 -40 -20
TOP
BOTTOM
I =
D
5.0A
V
DS
VGS
7.00V
5.00V
4.50V
3.50V
3.00V
2.70V
2.50V
2.25V
T , Junction Temperature ( C)
Vs. Temperature
J
, Drain-to-Source Voltage (V)
0
1
20 40 60
2.25V
20µs PULSE WIDTH
T = 150 C
J
80 100 120 140 160
10
°
V
°
GS
=
4.5V
3
100