MOSFET PWR P-CH 25V 2.5A 8-SOIC

MMDF2P02ER2G

Manufacturer Part NumberMMDF2P02ER2G
DescriptionMOSFET PWR P-CH 25V 2.5A 8-SOIC
ManufacturerON Semiconductor
MMDF2P02ER2G datasheet
 


Specifications of MMDF2P02ER2G

Fet Type2 P-Channel (Dual)Fet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs250 mOhm @ 2A, 10VDrain To Source Voltage (vdss)25V
Current - Continuous Drain (id) @ 25° C2.5AVgs(th) (max) @ Id3V @ 250µA
Gate Charge (qg) @ Vgs15nC @ 10VInput Capacitance (ciss) @ Vds475pF @ 16V
Power - Max2WMounting TypeSurface Mount
Package / Case8-SOIC (3.9mm Width)Lead Free Status / RoHS StatusLead free / RoHS Compliant
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MMDF2P02E
Power MOSFET
2 Amps, 25 Volts
P−Channel SO−8, Dual
These miniature surface mount MOSFETs feature ultra low R
and true logic level performance. They are capable of withstanding
high energy in the avalanche and commutation modes and the
drain−to−source diode has a low reverse recovery time. MiniMOSt
devices are designed for use in low voltage, high speed switching
applications where power efficiency is important. Typical applications
are dc−dc converters, and power management in portable and battery
powered products such as computers, printers, cellular and cordless
phones. They can also be used for low voltage motor controls in mass
storage products such as disk drives and tape drives. The avalanche
energy is specified to eliminate the guesswork in designs where
inductive loads are switched and offer additional safety margin against
unexpected voltage transients.
Features
Ultra Low R
Provides Higher Efficiency and Extends Battery Life
DS(on)
Logic Level Gate Drive − Can Be Driven by Logic ICs
Miniature SO−8 Surface Mount Package − Saves Board Space
Diode Is Characterized for Use In Bridge Circuits
Diode Exhibits High Speed, with Soft Recovery
I
Specified at Elevated Temperatures
DSS
Avalanche Energy Specified
Mounting Information for SO−8 Package Provided
Pb−Free Package is Available
MAXIMUM RATINGS
(T
= 25°C unless otherwise noted) (Note 1)
J
Rating
Drain−to−Source Voltage
Gate−to−Source Voltage − Continuous
Drain Current − Continuous @ T
= 25°C
A
Drain Current
− Continuous @ T
= 100°C
A
≤ 10 ms)
Drain Current
− Single Pulse (t
p
Total Power Dissipation @ T
= 25°C (Note
A
2)
Derate above 25°C
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
= 25°C
J
(V
= 20 Vdc, V
= 10 Vdc, Peak
DD
GS
= 25 W)
I
= 7.0 Apk, L = 10 mH, R
L
G
Thermal Resistance, Junction−to−Ambient
(Note 2)
Maximum Lead Temperature for Soldering
Purposes, 0.0625″ from case for 10 sec.
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Negative sign for P−Channel device omitted for clarity.
2. Mounted on 2″ square FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided) with
one die operating, 10 sec. max.
© Semiconductor Components Industries, LLC, 2006
April, 2006 − Rev. 8
DS(on)
Symbol
Value
Unit
V
25
Vdc
DSS
± 20
V
Vdc
GS
I
2.5
Adc
D
I
1.7
D
I
13
Apk
DM
P
2.0
W
D
16
mW/°C
°C
T
, T
−55 to 150
J
stg
E
mJ
AS
245
°C/W
R
62.5
qJA
°C
T
260
L
MMDF2P02ER2
MMDF2P02ER2G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
1
http://onsemi.com
2 AMPERES, 25 VOLTS
R
= 250 mW
DS(on)
P−Channel
D
G
S
MARKING
DIAGRAM
8
F2PO2
SO−8, Dual
AYWW G
8
CASE 751
G
STYLE 11
1
1
F2P02
= Specific Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
PIN ASSIGNMENT
Source−1
Drain−1
1
8
Gate−1
2
7
Drain−1
Source−2
Drain−2
3
6
Gate−2
4
5
Drain−2
Top View
ORDERING INFORMATION
Device
Package
Shipping
SO−8
2500 Tape & Reel
SO−8
2500 Tape & Reel
(Pb−Free)
Publication Order Number:
MMDF2P02E/D

MMDF2P02ER2G Summary of contents

  • Page 1

    ... J stg 245 °C/W R 62.5 qJA °C T 260 L MMDF2P02ER2 MMDF2P02ER2G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 1 http://onsemi.com 2 AMPERES, 25 VOLTS R = 250 mW DS(on) P−Channel MARKING ...

  • Page 2

    ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage = 250 mAdc Vdc Temperature Coefficient (Positive) Zero Gate Voltage Drain Current ( Vdc Vdc Vdc, ...

  • Page 3

    TYPICAL ELECTRICAL CHARACTERISTICS 4 4 3.7 V 3 0.4 0.8 1 DRAIN−TO−SOURCE VOLTAGE ...

  • Page 4

    Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (Dt) are determined by how fast the FET input capacitance can be charged by current from the ...

  • Page 5

    25° d(off d(on GATE RESISTANCE (OHMS) G Figure 9. Resistive ...

  • Page 6

    Mounted on 2″ sq. FR4 board (1″ sq. 2 oz. Cu 0.06″ thick single sided) with one die operating, 10s max. SINGLE PULSE T = 25° 100 ...

  • Page 7

    ... *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. E−FET and MiniMOS are trademarks of Semiconductor Components Industries, LLC (SCILLC). ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...