MOSFET N-CH 500V 23A TO-247AC

IRFP23N50LPBF

Manufacturer Part NumberIRFP23N50LPBF
DescriptionMOSFET N-CH 500V 23A TO-247AC
ManufacturerVishay
IRFP23N50LPBF datasheets
 


Specifications of IRFP23N50LPBF

Transistor PolarityN-ChannelContinuous Drain Current Id23A
Drain Source Voltage Vds500VOn Resistance Rds(on)235mohm
Rds(on) Test Voltage Vgs10VFet TypeMOSFET N-Channel, Metal Oxide
Fet FeatureStandardRds On (max) @ Id, Vgs235 mOhm @ 14A, 10V
Drain To Source Voltage (vdss)500VCurrent - Continuous Drain (id) @ 25° C23A
Vgs(th) (max) @ Id5V @ 250µAGate Charge (qg) @ Vgs150nC @ 10V
Input Capacitance (ciss) @ Vds3600pF @ 25VPower - Max370W
Mounting TypeThrough HolePackage / CaseTO-247-3 (Straight Leads), TO-247AC
Minimum Operating Temperature- 55 CConfigurationSingle
Resistance Drain-source Rds (on)0.235 Ohm @ 10 VForward Transconductance Gfs (max / Min)12 S
Drain-source Breakdown Voltage500 VGate-source Breakdown Voltage+/- 30 V
Continuous Drain Current23 APower Dissipation370000 mW
Maximum Operating Temperature+ 150 CMounting StyleThrough Hole
Voltage Vgs Max30VOperating TemperatureRoHS Compliant
Leaded Process CompatibleYesThreshold Voltage Vgs Typ5V
Rohs CompliantYesLead Free Status / RoHS StatusLead free / RoHS Compliant
Other names*IRFP23N50LPBF  
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PRODUCT SUMMARY
V
(V)
DS
R
()
V
= 10 V
DS(on)
GS
Q
(Max.) (nC)
g
Q
(nC)
gs
Q
(nC)
gd
Configuration
TO-247AC
G
S
D
G
N-Channel MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
a
Pulsed Drain Current
Linear Derating Factor
b
Single Pulse Avalanche Energy
a
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
Maximum Power Dissipation
c
Peak Diode Recovery dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
= 25 , I
b. Starting T
= 25 °C, L = 1.5 mH, R
J
g
 23 A, dI/dt  650 A/μs, V
 V
c. I
, T
SD
DD
DS
J
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91209
S11-0445-Rev. B, 21-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
IRFP23N50L, SiHFP23N50L
Power MOSFET
FEATURES
• Superfast Body Diode Eliminates the Need for
500
External Diodes in ZVS Applications
0.190
• Lower Gate Charge Results in Simpler Drive
150
Requirements
44
• Enhanced dV/dt Capabilities Offer Improved Ruggedness
72
• Higher Gate Voltage Threshold Offers Improved Noise
Single
Immunity
D
• Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Zero Voltage Switching SMPS
• Telecom and Server Power Supplies
• Uninterruptible Power Supplies
• Motor Control Applications
S
TO-247AC
IRFP23N50LPbF
SiHFP23N50L-E3
IRFP23N50L
SiHFP23N50L
= 25 °C, unless otherwise noted)
C
SYMBOL
T
= 25 °C
C
V
at 10 V
GS
T
= 100 °C
C
T
= 25 °C
C
dV/dt
T
J
for 10 s
6-32 or M3 screw
= 23 A (see fig. 12).
AS
 150 °C.
This datasheet is subject to change without notice.
Vishay Siliconix
RoHS*
COMPLIANT
LIMIT
UNIT
V
500
DS
V
V
± 30
GS
23
I
D
15
A
I
92
DM
2.9
W/°C
E
410
mJ
AS
I
23
A
AR
E
37
mJ
AR
P
370
W
D
21
V/ns
, T
- 55 to + 150
stg
°C
d
300
10
lbf · in
1.1
N · m
www.vishay.com
www.vishay.com/doc?91000
Available
1

IRFP23N50LPBF Summary of contents

  • Page 1

    ... Higher Gate Voltage Threshold Offers Improved Noise Single Immunity D • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Zero Voltage Switching SMPS • Telecom and Server Power Supplies • Uninterruptible Power Supplies • Motor Control Applications S TO-247AC IRFP23N50LPbF SiHFP23N50L-E3 IRFP23N50L SiHFP23N50L = 25 °C, unless otherwise noted) C SYMBOL ° ...

  • Page 2

    ... IRFP23N50L, SiHFP23N50L Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER Maximum Junction-to-Ambient Case-to-Sink, Flat, Greased Surface Maximum Junction-to-Case (Drain) SPECIFICATIONS ( °C, unless otherwise noted) J PARAMETER Static Drain-Source Breakdown Voltage V Temperature Coefficient DS Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance ...

  • Page 3

    ... Fig Typical Transfer Characteristics 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -60 100 Fig Normalized On-Resistance vs. Temperature This datasheet is subject to change without notice. Vishay Siliconix ° 150 ° µs PULSE WIDTH T = 150°C J 6.0 11.0 16 Gate-to-Source Voltage ( ...

  • Page 4

    ... IRFP23N50L, SiHFP23N50L Vishay Siliconix 100000 MHZ iss rss oss ds gd 10000 Ciss 1000 Coss 100 Crss 100 V , Drain-to-Source Voltage (V) DS Fig Typical Capacitance vs. Drain-to-Source Voltage 400 0 100 200 300 Drain-to-Source Voltage (V) Fig Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...

  • Page 5

    ... THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT IRFP23N50L, SiHFP23N50L Fig. 11a - Switching Time Test Circuit 1.5 2 Fig. 11b - Switching Time Waveforms 125 150 (°C) 0.001 0. Rectangular Pulse Duration (sec) 1 This datasheet is subject to change without notice. Vishay Siliconix D.U. Pulse width ≤ 1 µs Duty factor ≤ 0 ...

  • Page 6

    ... IRFP23N50L, SiHFP23N50L Vishay Siliconix 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1 Temperature (°C) J Fig Threshold Voltage vs. Temperature 750 TOP BOTTOM 23A 600 450 300 150 100 Starting T , Junction Temperature Fig Maximum Avalanche Energy s. Drain Current D.U 0.01 Ω Fig. 15a - Unclamped Inductive Test Circuit www ...

  • Page 7

    ... V for logic level devices GS Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91209. ...

  • Page 8

    ... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...