IRFP23N50LPBF Vishay, IRFP23N50LPBF Datasheet - Page 4

• Manufacturer Part Number: IRFP23N50LPBF
• Description: MOSFET N-CH 500V 23A TO-247AC
• Manufacturer: Vishay

Specifications of IRFP23N50LPBF

• Transistor Polarity: N-Channel
• Continuous Drain Current Id: 23A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 235mohm
• Rds(on) Test Voltage Vgs: 10V
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 235 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 23A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 150nC @ 10V
• Input Capacitance (ciss) @ Vds: 3600pF @ 25V
• Power - Max: 370W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Resistance Drain-source Rds (on): 0.235 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 12 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 23 A
• Power Dissipation: 370000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Voltage Vgs Max: 30V
• Operating Temperature: RoHS Compliant
• Leaded Process Compatible: Yes
• Threshold Voltage Vgs Typ: 5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: *IRFP23N50LPBF

IRFP23N50L, SiHFP23N50L
Vishay Siliconix
www.vishay.com
4
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
100000
10000
1000
100
25
20
15
10
10
5
0
0
1
100
V DS , Drain-to-Source Voltage (V)
V
DS
200
, Drain-to-Source Voltage (V)
10
V
C
C
C
GS
iss
rss
oss
= C
= 0 V,
= C
= C
300
gs
gd
ds
+ C
Ciss
+ C
Crss
Coss
gd
400
gd
,
f = 1 MHZ
100
C
ds
This datasheet is subject to change without notice.
500
SHORTED
600
1000
Fig. 8 - Typical Gate Charge vs. Gate-to-Source Voltage
1000
100
12
10
10
Fig. 7 - Maximum Safe Operating Area
7
5
2
0
1
0
10
Single Pulse
T
T
I
J
C
D
= 150 °C
= 25 °C
= 23
OPERATION IN THIS AREA LIMITED
24
V
DS
Q
, Drain-to-Source Voltage (V)
G
100
, Total Gate Charge (nC)
V
V
V
DS
DS
DS
48
BY R
= 400 V
= 250 V
= 100 V
DS(ON)
S11-0445-Rev. B, 21-Mar-11
www.vishay.com/doc?91000
72
10us
100us
Document Number: 91209
1ms
10ms
1000
96
10000
120