2N7002E,215 NXP Semiconductors, 2N7002E,215 Datasheet - Page 3

• Manufacturer Part Number: 2N7002E,215
• Description: MOSFET N-CH 60V 385MA SOT23
• Manufacturer: NXP Semiconductors
• Type: Power MOSFETr

Specifications of 2N7002E,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 385mA
• Vgs(th) (max) @ Id: 2.5V @ 250µA
• Gate Charge (qg) @ Vgs: 0.69nC @ 10V
• Input Capacitance (ciss) @ Vds: 50pF @ 10V
• Power - Max: 830mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5.5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 0.385 A
• Power Dissipation: 830 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 3Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±30V
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: TO-236AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 2N7002E T/R; 2N7002E T/R; 2N7002E,215; 568-4858-2; 934056996215

Philips Semiconductors
2N7002E_3
Product data sheet
Fig 1. Normalized total power dissipation as a
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
(A)
I
P
10
10
(%)
D
120
der
10
80
40
-1
-2
0
1
function of solder point temperature
T
P
0
1
sp
der
= 25 C; I
=
------------------------
P
tot 25 C
50
P
DM
tot
is single pulse
Limit R
100 %
100
DSon
= V
DS
150
/ I
D
T
03aa17
sp
( C)
200
Rev. 03 — 28 April 2006
10
DC
Fig 2. Normalized continuous drain current as a
(%)
I
der
120
80
40
0
function of solder point temperature
I
0
der
=
-------------------- -
I
D 25 C
I
50
D
V
100 %
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
DS
100
N-channel TrenchMOS FET
(V)
150
t
10 ms
100 ms
100 s
1 ms
p
2N7002E
=
T
03aa25
10 s
sp
03ai10
( C)
10
200
2
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