PSMN4R0-30YL,115 NXP Semiconductors, PSMN4R0-30YL,115 Datasheet - Page 3

• Manufacturer Part Number: PSMN4R0-30YL,115
• Description: MOSFET N-CH 30V 100A LFPAK
• Manufacturer: NXP Semiconductors

Specifications of PSMN4R0-30YL,115

• Package / Case: LFPak-4
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.15V @ 1mA
• Gate Charge (qg) @ Vgs: 36.6nC @ 10V
• Input Capacitance (ciss) @ Vds: 2090pF @ 12V
• Power - Max: 69W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single Triple Source
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 4 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 69 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 568-4683-2; 934063074115; PSMN4R0-30YL T/R

NXP Semiconductors
PSMN4R0-30YL
Product data sheet
Fig 1.
Fig 3.
(A)
I
10
D
10
10
(A)
120
100
I
10
D
-1
80
60
40
20
3
2
1
10
0
mounting base temperature
Continuous drain current as a function of
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
0
-1
(1)
50
100
Limit R
DSon
= V
150
DS
All information provided in this document is subject to legal disclaimers.
T
003aac649
mb
/ I
1
D
(°C)
200
Rev. 04 — 10 March 2011
N-channel 30 V 4 mΩ logic level MOSFET in LFPAK
Fig 2.
P
(%)
der
120
80
40
0
function of mounting base temperature
Normalized total power dissipation as a
0
DC
10
50
PSMN4R0-30YL
100
V
DS
(V)
100 μs
1 ms
10 ms
100 ms
10 μs
150
© NXP B.V. 2011. All rights reserved.
T
003aac650
mb
03aa16
(°C)
200
10
2
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