STN3NF06 STMicroelectronics, STN3NF06 Datasheet
STN3NF06
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STN3NF06 Summary of contents
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... Applications ■ Switching application Order codes Part number STN3NF06 February 2007 N-channel 60V - 0.07Ω -4A - SOT-223 STripFET™ II Power MOSFET R I DS(on) D <0.1Ω 4A Internal schematic diagram Marking N3NF06 Rev 6 STN3NF06 SOT-223 Package Packaging SOT-223 Tape & reel 1/12 www.st.com 12 ...
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... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/ STN3NF06 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ...
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... STN3NF06 1 Electrical ratings Table 1. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS I Drain current (continuous Drain current (continuous (1) I Drain current (pulsed Total dissipation at T TOT Derating factor (2) dv/dt Peak diode recovery voltage slope (3) E Single pulse avalanche energy AS T Operating junction temperature ...
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... Figure 13 =4.7Ω (see Figure 13) Min. Typ 250µ 1.5A 0.07 D Min. Typ. =1.5A 3 315 = 3.5 3.5 Min. Typ. =1.5A =10V GS 18 =1.5A =10V GS 6 STN3NF06 Max. Unit V 1 µA 10 µA 100 nA ± Ω 0.10 Max. Unit Max. Unit ...
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... STN3NF06 Table 6. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) Forward on voltage Reverse recovery time rr Q Reverse recovery charge rr Reverse recovery current I RRM 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Parameter Test conditions ...
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... Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 3. Output characteristics Figure 5. Transconductance 6/12 Figure 2. Thermal impedance Figure 4. Transfer characteristics Figure 6. Static drain-source on resistance STN3NF06 ...
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... STN3NF06 Figure 7. Gate charge vs. gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs. temperature Figure 11. Source-drain diode forward characteristics Electrical characteristics Capacitance variations Figure 10. Normalized on resistance vs. temperature Figure 12. Normalized breakdown voltage vs. temperature 7/12 ...
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... Test circuit Figure 13. Switching times test circuit for resistive load Figure 15. Test circuit for inductive load switching and diode recovery times Figure 17. Unclamped inductive waveform 8/12 Figure 14. Gate charge test circuit Figure 16. Unclamped Inductive load test circuit Figure 18. Switching time waveform STN3NF06 ...
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... STN3NF06 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label ...
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... STN3NF06 mils MIN. TYP. MAX. 89.4 90.6 91.7 179.9 181.1 182.3 7.9 15.7 23.6 24.8 25.6 26.4 59.1 63 66.9 12.6 114.2 118.1 122.1 26.4 27.6 28.7 263.8 275 ...
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... STN3NF06 5 Revision history Table 7. Revision history Date 21-Jun-2004 04-Oct-2006 01-Feb-2007 Revision 4 Complete datasheet 5 The document has been reformatted 6 Typo mistake on Table Revision history Changes 1. 11/12 ...
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... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12 Please Read Carefully: © 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com STN3NF06 ...