STN3NF06 STMicroelectronics, STN3NF06 Datasheet

MOSFET N-CH 60V 4A SOT-223

STN3NF06

Manufacturer Part Number
STN3NF06
Description
MOSFET N-CH 60V 4A SOT-223
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STN3NF06

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
100 mOhm @ 1.5A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
4A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
13nC @ 10V
Input Capacitance (ciss) @ Vds
315pF @ 25V
Power - Max
3.3W
Mounting Type
Surface Mount
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.07 Ohms
Forward Transconductance Gfs (max / Min)
3 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
4 A
Power Dissipation
3.3 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4764-2

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Order codes
General features
Description
This Power MOSFET is the latest development of
STMicroelectronics unique "Single Feature
Size™" strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
Applications
February 2007
Exceptional dv/dt capability
100% avalanche tested
Avalanche rugged technology
Switching application
STN3NF06
Type
Part number
STN3NF06
(@Tjmax)
V
60V
DSS
R
<0.1Ω
DS(on)
Marking
N3NF06
4A
I
D
N-channel 60V - 0.07Ω -4A - SOT-223
Rev 6
Internal schematic diagram
STripFET™ II Power MOSFET
Package
SOT-223
2
SOT-223
1
STN3NF06
2
3
Tape & reel
Packaging
www.st.com
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STN3NF06 Summary of contents

Page 1

... Applications ■ Switching application Order codes Part number STN3NF06 February 2007 N-channel 60V - 0.07Ω -4A - SOT-223 STripFET™ II Power MOSFET R I DS(on) D <0.1Ω 4A Internal schematic diagram Marking N3NF06 Rev 6 STN3NF06 SOT-223 Package Packaging SOT-223 Tape & reel 1/12 www.st.com 12 ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/ STN3NF06 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 ...

Page 3

... STN3NF06 1 Electrical ratings Table 1. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS I Drain current (continuous Drain current (continuous (1) I Drain current (pulsed Total dissipation at T TOT Derating factor (2) dv/dt Peak diode recovery voltage slope (3) E Single pulse avalanche energy AS T Operating junction temperature ...

Page 4

... Figure 13 =4.7Ω (see Figure 13) Min. Typ 250µ 1.5A 0.07 D Min. Typ. =1.5A 3 315 = 3.5 3.5 Min. Typ. =1.5A =10V GS 18 =1.5A =10V GS 6 STN3NF06 Max. Unit V 1 µA 10 µA 100 nA ± Ω 0.10 Max. Unit Max. Unit ...

Page 5

... STN3NF06 Table 6. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) Forward on voltage Reverse recovery time rr Q Reverse recovery charge rr Reverse recovery current I RRM 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration=300µs, duty cycle 1.5% Parameter Test conditions ...

Page 6

... Electrical characteristics 2.1 Electrical characteristics (curves) Figure 1. Safe operating area Figure 3. Output characteristics Figure 5. Transconductance 6/12 Figure 2. Thermal impedance Figure 4. Transfer characteristics Figure 6. Static drain-source on resistance STN3NF06 ...

Page 7

... STN3NF06 Figure 7. Gate charge vs. gate-source voltage Figure 8. Figure 9. Normalized gate threshold voltage vs. temperature Figure 11. Source-drain diode forward characteristics Electrical characteristics Capacitance variations Figure 10. Normalized on resistance vs. temperature Figure 12. Normalized breakdown voltage vs. temperature 7/12 ...

Page 8

... Test circuit Figure 13. Switching times test circuit for resistive load Figure 15. Test circuit for inductive load switching and diode recovery times Figure 17. Unclamped inductive waveform 8/12 Figure 14. Gate charge test circuit Figure 16. Unclamped Inductive load test circuit Figure 18. Switching time waveform STN3NF06 ...

Page 9

... STN3NF06 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label ...

Page 10

... STN3NF06 mils MIN. TYP. MAX. 89.4 90.6 91.7 179.9 181.1 182.3 7.9 15.7 23.6 24.8 25.6 26.4 59.1 63 66.9 12.6 114.2 118.1 122.1 26.4 27.6 28.7 263.8 275 ...

Page 11

... STN3NF06 5 Revision history Table 7. Revision history Date 21-Jun-2004 04-Oct-2006 01-Feb-2007 Revision 4 Complete datasheet 5 The document has been reformatted 6 Typo mistake on Table Revision history Changes 1. 11/12 ...

Page 12

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12 Please Read Carefully: © 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com STN3NF06 ...

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