STD45NF75T4 STMicroelectronics, STD45NF75T4 Datasheet - Page 3

• Manufacturer Part Number: STD45NF75T4
• Description: MOSFET N-CH 75V 40A DPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STD45NF75T4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 24 mOhm @ 20A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 40A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 80nC @ 10V
• Input Capacitance (ciss) @ Vds: 1760pF @ 25V
• Power - Max: 125W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.024 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 50 S
• Drain-source Breakdown Voltage: 75 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 40 A
• Power Dissipation: 125000 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 20A
• Drain Source Voltage Vds: 75V
• On Resistance Rds(on): 18mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4334-2

STD45NF75
1
Electrical ratings
Table 2.
1. Current limited by package
2. Pulse width limited by safe operating area.
3. I
4. Starting T
Table 3.
1. for 10 sec. 1.6 mm from case
Symbol
R
R
Symbol
dv/dt
SD
E
thj-case
V
I
thj-pcb
DM
I
V
V
AS
T
T
P
D
DGR
I
T
DS
GS
stg
J
D
≤ 40 A, di/dt ≤ 800 A/µs, V
tot
(1)
j
(2)
(4)
(3)
j
= 25 °C, I
Absolute maximum ratings
Thermal data
Thermal resistance junction-case max
Thermal resistance junction-pcb max
Maximum lead temperature for soldering
purpose
Drain-source voltage (V
Drain-gate voltage (R
Gate- source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Peak diode recovery voltage slope
Single pulse avalanche energy
Storage temperature
Max. operating junction temperature
D
(1)
= 20 A, V
DD
DD
Parameter
Doc ID 9902 Rev 5
= 40 V
Parameter
≤ V
C
GS
(BR)DSS
= 25 °C
GS
= 20 kΩ)
= 0)
, T
j
C
C
≤ T
= 25 °C
= 100 °C
JMAX
see
-55 to 175
Figure 16.
Figure 17.
Value
± 20
0.83
160
125
500
75
75
40
30
20
Value
260
1.2
Electrical ratings
and
W/°C
°C/W
°C/W
V/ns
Unit
Unit
mJ
°C
W
°C
V
V
V
A
A
A
3/16