IRF7805QTRPBF International Rectifier, IRF7805QTRPBF Datasheet

MOSFET N-CH 30V 13A 8-SOIC

IRF7805QTRPBF

Manufacturer Part Number
IRF7805QTRPBF
Description
MOSFET N-CH 30V 13A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRF7805QTRPBF.pdf (5 pages)

Specifications of IRF7805QTRPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
11 mOhm @ 7A, 4.5V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
13A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
31nC @ 5V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF7805QTRPBFTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
IRF7805QTRPBF
Manufacturer:
IR
Quantity:
20 000
l
l
l
l
l
l
l
Description
These HEXFET
the lastest processing techniques to achieve
extremely low on-resistance per silicon area.
Additional features of these HEXFET Power
MOSFET's are a 150°C junction operating
temperature, fast switching speed and improved
repetitive avalanche rating. These benefits combine
to make this design an extremely efficient and reliable
device for use in a wide variety of applications.
The efficient SO-8 package provides enhanced
thermal characteristics making it ideal in a variety of
power applications. This surface mount SO-8 can
dramatically reduce board space and is also available
in Tape & Reel.
V
V
I
I
I
P
P
T
T
R
R
Absolute Maximum Ratings
Thermal Resistance
D
D
DM
www.irf.com
J
STG
DS
GS
D
D
θJL
θJA
@ T
@ T
Advanced Process Technology
Ultra Low On-Resistance
N Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
Lead-Free
@T
@T
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
®
Power MOSFET's in package utilize
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Junction-to-Drain Lead
Junction-to-Ambient
Parameter
Parameter
e
e
eg
g
GS
GS
@ 10V
@ 10V
Typ.
–––
–––
SO-8
IRF7805QPbF
V
R
Qg
Qsw
Qoss
DS
DS(on)
-55 to + 150
Device Features
Max.
0.02
± 12
100
2.5
1.6
30
13
10
IRF7805Q
30V
11mΩ
31nC
11.5nC
36nC
Max.
20
50
G
S
S
S
1
2
3
4
T o p V ie w
PD – 96114B
Units
Units
W/°C
°C/W
°C
03/30/11
W
V
A
8
7
6
5
D
D
D
D
A
1

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IRF7805QTRPBF Summary of contents

Page 1

Advanced Process Technology l Ultra Low On-Resistance l N Channel MOSFET l Surface Mount l Available in Tape & Reel l 150°C Operating Temperature l Lead-Free l Description ® These HEXFET Power MOSFET's in package utilize the lastest processing techniques ...

Page 2

IRF7805QPbF Static @ T = 25°C (unless otherwise specified) J Parameter Drain-to-Source Breakdown Voltage BV DSS Static Drain-to-Source On-Resistance R DS(on) Gate Threshold Voltage V GS(th) I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage Q ...

Page 3

Fig 1. Normalized On-Resistance vs. Temperature Fig 3. Typical Rds(on) vs. Gate-to-Source Voltage 100 D = 0.50 0.20 10 0.10 0.05 0.02 0.01 1 SINGLE PULSE (THERMAL RESPONSE) 0.1 0.001 0.01 Figure 5. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com ...

Page 4

IRF7805QPbF SO-8 Package Outline Dimensions are shown in millimeters (inches 0.25 [.010 NOT DIMENS IONING ...

Page 5

SO-8 Tape and Reel Dimensions are shown in millimeters (inches) TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & ...

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