STS14N3LLH5 STMicroelectronics, STS14N3LLH5 Datasheet

MOSFET N-CH 30V 14A SOIC-8

STS14N3LLH5

Manufacturer Part Number
STS14N3LLH5
Description
MOSFET N-CH 30V 14A SOIC-8
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STS14N3LLH5

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
6 mOhm @ 7A, 10V
Drain To Source Voltage (vdss)
30V
Vgs(th) (max) @ Id
1V @ 250µA
Gate Charge (qg) @ Vgs
12nC @ 4.5V
Input Capacitance (ciss) @ Vds
1500pF @ 25V
Power - Max
2.7W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
N Channel
Continuous Drain Current Id
7A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
5mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Continuous Drain (id) @ 25° C
-
Other names
497-7027-2

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STS14N3LLH5
Manufacturer:
GPS
Quantity:
134
Part Number:
STS14N3LLH5
Manufacturer:
ST
Quantity:
8 000
Part Number:
STS14N3LLH5
Manufacturer:
ST
0
Part Number:
STS14N3LLH5
Manufacturer:
ST
Quantity:
20 000
Part Number:
STS14N3LLH5
Manufacturer:
ST
Quantity:
10 618
Company:
Part Number:
STS14N3LLH5
Quantity:
1 125
Features
1. The value is rated according R
Application
Description
This product utilizes the 5
rules of ST’s proprietary STripFET™ technology.
The lowest available R
package, makes this device suitable for the most
demanding DC-DC converter applications, where
high power density is to be achieved.
Table 1.
November 2009
STS14N3LLH5
R
Extremely low on-resistance R
Very low switching gate charge
High avalanche ruggedness
Low gate drive power losses
Switching applications
DS(on)
STS14N3LLH5
Type
Order code
* Q
Device summary
g
industry benchmark
V
30 V
DS(on)
DSS
th
generation of design
thj-pcb
*Q
<0.006 Ω
g
R
, in SO-8
DS(on)
DS(on)
Marking
14D3L
14 A
Doc ID 14166 Rev 4
I
D
(1)
N-channel 30 V, 0.005 Ω, 14 A, SO-8
Figure 1.
STripFET™ V Power MOSFET
Package
SO-8
Internal schematic diagram
STS14N3LLH5
SO-8
Tape and reel
Packaging
www.st.com
1/12
12

Related parts for STS14N3LLH5

STS14N3LLH5 Summary of contents

Page 1

... Device summary Order code STS14N3LLH5 November 2009 N-channel 30 V, 0.005 Ω SO-8 STripFET™ V Power MOSFET R I DS(on) D <0.006 Ω ( DS(on) Figure SO-8 g Marking 14D3L Doc ID 14166 Rev 4 STS14N3LLH5 SO-8 Internal schematic diagram Package Packaging SO-8 Tape and reel 1/12 www.st.com 12 ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/ Doc ID 14166 Rev 4 STS14N3LLH5 ...

Page 3

... STS14N3LLH5 1 Electrical ratings Table 2. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS (1) I Drain current (continuous (1) I Drain current (continuous (2) I Drain current (pulsed) DM (2) P Total dissipation at T TOT Derating factor T Operating junction temperature J Storage temperature T stg 1. The value is rated according R 2 ...

Page 4

... V =max rating @125 ° ± 4 Parameter Test conditions f=1 MHz MHz open drain (see Figure 14) Doc ID 14166 Rev 4 STS14N3LLH5 Min. Typ 250 µ 0.005 0.006 0.0062 0.0077 D Min. Typ. Max. 1500 - 295 4.7 Max. Unit V 1 µA 10 µA 100 nA ± ...

Page 5

... STS14N3LLH5 Table 7. Switching times Symbol t d(on) Turn-on delay time t Rise time r t Turn-off delay time d(off) Fall time t f Table 8. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge ...

Page 6

... Figure 2. Safe operating area Figure 4. Output characteristics Figure 6. Normalized B VDSS BV DSS (norm) 1.1 1. 1.06 1.04 1.02 1 0.98 0.96 0.94 0.92 -55 - 6/12 Figure 3. Figure 5. vs temperature Figure 7. HV42950 T (°C) 95 120 145 J Doc ID 14166 Rev 4 STS14N3LLH5 Thermal impedance Transfer characteristics Static drain-source on resistance ...

Page 7

... STS14N3LLH5 Figure 8. Gate charge vs gate-source voltage Figure Figure 10. Normalized gate threshold voltage vs temperature V GS(th) (norm) 1.2 1 0.8 0.6 0.4 0.2 0 -55 - Figure 12. Source-drain diode forward characteristics V (V) SD 0.9 T =-55 °C J 0.8 0.7 0.6 0.5 0 HV42940 C(pF) 2000 1500 1000 500 ...

Page 8

... AM01468v1 Figure 16. Unclamped inductive load test 3.3 1000 µF µ AM01470v1 Figure 18. Switching time waveform V (BR)DSS 10% 0 AM01472v1 Doc ID 14166 Rev 4 STS14N3LLH5 12V 47kΩ 100nF I =CONST G 100Ω GMAX 2200 µF 2.7kΩ 47kΩ 1kΩ circuit 2200 3.3 µ ...

Page 9

... STS14N3LLH5 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ® ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: www.st.com. ECOPACK trademark. Doc ID 14166 Rev 4 Package mechanical data ® 9/12 ...

Page 10

... Package mechanical data Dim ccc 10/12 SO-8 mechanical data mm Min. Typ. 0.10 1.25 0.28 0.17 4.80 4.90 5.80 6.00 3.80 3.90 1.27 0.25 0.40 1.04 0° Doc ID 14166 Rev 4 STS14N3LLH5 Max. 1.75 0.25 0.48 0.23 5.00 6.20 4.00 0.50 1.27 8° 0.10 0016023_D ...

Page 11

... STS14N3LLH5 5 Revision history Table 9. Document revision history Date 12-Nov-2007 15-Apr-2008 23-Sep-2008 19-Nov-2009 Revision 1 First release Figure 1: Internal schematic diagram – Updated 2 – Document status promoted from preliminary data to datasheet value has been changed on GS – Added Q max. value – Added new row in ...

Page 12

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12 Please Read Carefully: © 2009 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com Doc ID 14166 Rev 4 STS14N3LLH5 ...

Related keywords