STD4NK80ZT4 STMicroelectronics, STD4NK80ZT4 Datasheet

MOSFET N-CH 800V 3A DPAK

STD4NK80ZT4

Manufacturer Part Number
STD4NK80ZT4
Description
MOSFET N-CH 800V 3A DPAK
Manufacturer
STMicroelectronics
Series
SuperMESH™r
Datasheet

Specifications of STD4NK80ZT4

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3.5 Ohm @ 1.5A, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
4.5V @ 50µA
Gate Charge (qg) @ Vgs
22.5nC @ 10V
Input Capacitance (ciss) @ Vds
575pF @ 25V
Power - Max
80W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Transistor Polarity
N Channel
Continuous Drain Current Id
1.5A
Drain Source Voltage Vds
800V
On Resistance Rds(on)
3ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3.75V
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
3.5 Ohms
Forward Transconductance Gfs (max / Min)
2.9 S
Drain-source Breakdown Voltage
800 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
3 A
Power Dissipation
80 W
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-8910-2
STD4NK80ZT4

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Order codes
General features
Description
The SuperMESH™ series is obtained through an
extreme optimization of ST’s well established
strip-based PowerMESH™ layout. In addition to
pushing on-resistance significantly down, special
care is taken to ensure a very good dv/dt
capability for the most demanding applications.
Such series complements ST full range of high
voltage MOSFETs including revolutionary
MDmesh™ products.
Applications
August 2006
STP4NK80ZFP
STD4NK80Z-1
STD4NK80Z
STP4NK80Z
Extremely high dv/dt capability
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitances
Very good manufacturing repeatibility
Switching application
Type
STP4NK80ZFP
STD4NK80ZT4
STD4NK80Z-1
Part number
STP4NK80Z
N-channel 800V - 3Ω - 3A - TO-220/TO-220FP/DPAK/IPAK
(@Tjmax)
800 V
800 V
800 V
800 V
V
DSS
R
< 3.5 Ω
< 3.5 Ω
< 3.5 Ω
< 3.5 Ω
DS(on)
P4NK80ZFP
D4NK80Z
D4NK80Z
P4NK80Z
Zener - Protected SuperMESH™ MOSFET
Marking
3 A
3 A
3 A
3 A
I
STP4NK80Z - STP4NK80ZFP
D
STD4NK80Z - STD4NK80Z-1
Rev 8
Internal schematic diagram
TO-220FP
Package
TO-220
TO-220
DPAK
DPAK
IPAK
1
3
TO-220FP
Tape & reel
Packaging
IPAK
Tube
Tube
Tube
1
2
1
2
3
www.st.com
3
1/18
18

Related parts for STD4NK80ZT4

STD4NK80ZT4 Summary of contents

Page 1

... Such series complements ST full range of high voltage MOSFETs including revolutionary MDmesh™ products. Applications ■ Switching application Order codes Part number STP4NK80Z STP4NK80ZFP STD4NK80ZT4 STD4NK80Z-1 August 2006 STP4NK80Z - STP4NK80ZFP STD4NK80Z - STD4NK80Z-1 Zener - Protected SuperMESH™ MOSFET R I DS(on) D < 3.5 Ω ...

Page 2

Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...

Page 3

STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1 1 Electrical ratings Table 1. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS I Drain current (continuous Drain current (continuous (2) ...

Page 4

Electrical ratings Table 3. Avalanche characteristics Symbol Avalanche current, repetitive or not-repetitive I AR (pulse width limited by Tj Max) Single pulse avalanche energy E AS (starting Tj=25°C, Id=Iar, Vdd=50V) Table 4. Gate-source zener diode Symbol BV Gate-source breakdown voltage ...

Page 5

STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1 2 Electrical characteristics (T =25°C unless otherwise specified) CASE Table 5. On/off states Symbol Drain-source breakdown V (BR)DSS voltage Zero gate voltage drain I DSS current (V Gate body leakage current I GSS ...

Page 6

Electrical characteristics Table 7. Source drain diode Symbol I Source-drain current SD (1) I Source-drain current (pulsed) SDM (2) V Forward on voltage SD t Reverse recovery time rr Q Reverse recovery charge rr I Reverse recovery current RRM 1. ...

Page 7

STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1 2.1 Electrical characteristics (curves) Figure 1. Safe operating area for TO- 220/DPAK/IPAK Figure 3. Safe operating area for TO-220FP Figure 5. Output characterisics Electrical characteristics Figure 2. Thermal impedance for TO- 220/DPAK/IPAK Figure ...

Page 8

Electrical characteristics Figure 7. Transconductance Figure 9. Gate charge vs gate-source voltage Figure 10. Capacitance variations Figure 11. Source-drain diode forward characteristics 8/18 STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1 Figure 8. Static drain-source on resistance Figure 12. Normalized BVdss ...

Page 9

STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1 Figure 13. Normalized gate threshold voltage vs temperature Figure 15. Normalized on resistance vs temperature Electrical characteristics Figure 14. Avalanche energy vs temperature 9/18 ...

Page 10

Test circuit 3 Test circuit Figure 16. Unclamped Inductive load test circuit Figure 18. Switching times test circuit for resistive load Figure 20. Test circuit for inductive load switching and diode recovery times 10/18 STP4NK80Z - STP4NK80ZFP - STD4NK80Z - ...

Page 11

STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is ...

Page 12

Package mechanical data DIM L20 L30 øP Q 12/18 STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1 TO-220 MECHANICAL DATA mm. MIN. TYP MAX. 4.40 4.60 0.61 0.88 ...

Page 13

STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1 DIM Ø TO-220FP MECHANICAL DATA mm. MIN. TYP MAX. 4.4 4.6 2.5 2.7 2.5 2.75 0.45 0.7 ...

Page 14

Package mechanical data DIM (L1 14/18 STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1 DPAK MECHANICAL DATA mm. MIN. TYP MAX. 2.2 ...

Page 15

STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1 DIM TO-251 (IPAK) MECHANICAL DATA mm MIN. TYP. MAX. 2.2 2.4 0.9 1.1 0.7 1.3 0.64 ...

Page 16

Packaging mechanical data 5 Packaging mechanical data DPAK FOOTPRINT All dimensions are in millimeters TAPE MECHANICAL DATA mm DIM. MIN. MAX 10.4 10.6 B1 12.1 D 1.5 1.6 D1 1.5 E 1.65 1.85 F 7.4 7.6 ...

Page 17

STP4NK80Z - STP4NK80ZFP - STD4NK80Z - STD4NK80Z-1 6 Revision history Table 8. Revision history Date 30-Mar-2005 06-Sep-2005 21Jan-2006 16-Aug-2006 Revision 5 Preliminary version 6 Final version 7 Inserted ecopack indication 8 New template, no content change Revision history Changes 17/18 ...

Page 18

... Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST’s terms and conditions of sale. ...

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