STP27N3LH5 STMicroelectronics, STP27N3LH5 Datasheet - Page 6

• Manufacturer Part Number: STP27N3LH5
• Description: MOSFET N-CH 30V 27A TO220
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP27N3LH5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 20 mOhm @ 13.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 27A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 4.6nC @ 5V
• Input Capacitance (ciss) @ Vds: 475pF @ 25V
• Power - Max: 45W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 27A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 0.015ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 2.5V
• Configuration: Single
• Resistance Drain-source Rds (on): 0.02 Ohms
• Drain-source Breakdown Voltage: 30 V
• Continuous Drain Current: 27 A
• Power Dissipation: 30 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-9095-5

Electrical characteristics
2.1
6/17
Figure 2.
Figure 4.
Figure 6.
0.01
0.01
100
100
0.1
0.1
(A)
(A)
10
10
I
I
D
D
1
1
0.1
0.1
(A)
40
30
20
10
70
60
50
I
D
0
0
Electrical characteristics (curves)
Safe operating area for TO-220
Safe operating area for DPAK, IPAK Figure 5.
Output characteristics
V
GS
1
=10V
1
1
Tc=25°C
Tj=175°C
Sinlge
pulse
Tj=175°C
Tc=25°C
Sinlge
pulse
2
10
10
3
6V
4
V
V
3V
DS
DS
V
5V
4V
(V)
(V)
DS
Doc ID 15617 Rev 2
100µs
100µs
1ms
10ms
1ms
10ms
AM03897v1
AM03898v1
(V)
AM03900v1
Figure 3.
Figure 7.
STD27N3LH5, STP27N3LH5, STU27N3LH5
(A)
70
60
40
30
20
10
50
I
D
0
0
Thermal impedance for TO-220
Thermal impedance for DPAK, IPAK
Transfer characteristics
V
DS
2
=5V
4
6
8
V
GS
(V)
AM03901v1