STD3NK100Z STMicroelectronics, STD3NK100Z Datasheet - Page 15

• Manufacturer Part Number: STD3NK100Z
• Description: MOSFET N-CH 1000V 2.5A DPAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STD3NK100Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6 Ohm @ 1.25A, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 2.5A
• Vgs(th) (max) @ Id: 4.5V @ 50µA
• Gate Charge (qg) @ Vgs: 18nC @ 10V
• Input Capacitance (ciss) @ Vds: 601pF @ 25V
• Power - Max: 90W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6 Ohm @ 10 V
• Drain-source Breakdown Voltage: 1000 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 2.5 A
• Power Dissipation: 90000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 2.5A
• Drain Source Voltage Vds: 1kV
• On Resistance Rds(on): 5.4ohm
• Rds(on) Test Voltage Vgs: 10V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7967-2; STD3NK100Z

STF3NK100Z - STP3NK100Z - STD3NK100Z
6
Revision history
Table 10.
17-May-2007
18-Oct-2007
Date
Document revision history
Revision
1
2
First release
Added DPAK
Changes
Revision history
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