STB10NK60ZT4 STMicroelectronics, STB10NK60ZT4 Datasheet - Page 5

• Manufacturer Part Number: STB10NK60ZT4
• Description: MOSFET N-CH 600V 10A D2PAK
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STB10NK60ZT4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 750 mOhm @ 4.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4.5V @ 250µA
• Gate Charge (qg) @ Vgs: 70nC @ 10V
• Input Capacitance (ciss) @ Vds: 1370pF @ 25V
• Power - Max: 115W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 4.5A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 650mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Configuration: Single
• Resistance Drain-source Rds (on): 0.75 Ohms
• Forward Transconductance Gfs (max / Min): 7.8 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 10 A
• Power Dissipation: 115 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-6544-2; STB10NK60ZT4

STB10NK60Z, STP10NK60Z, STW10NK60Z
2
Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 5.
Table 6.
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
2. C
C
V
Symbol
Symbol
R
V
oss eq
(BR)DSS
g
increases from 0 to 80%
C
I
I
C
DS(on)
C
Q
GS(th)
Q
GSS
DSS
fs
Q
oss eq
oss
iss
rss
gs
gd
g
(1)
(2)
. is defined as a constant equivalent capacitance giving the same charging time as C
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source breakdown
voltage
Zero gate voltage drain
current (V
Gate body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
On /off states
Dynamic
Parameter
Parameter
GS
DS
= 0)
= 0)
I
V
V
V
V
V
D
V
V
V
V
V
GS
GS
DS
DS
DS
GS
GS
DS
DS
DD
= 250 µA, V
= V
= 10 V, I
= Max rating,
= Max rating, Tj=125 °C
= ±20 V, V
=0, V
=480 V, I
=15 V, I
=25 V, f=1 MHz, V
=10 V
Test conditions
Test conditions
GS
, I
DS
D
(see Figure 20)
D
D
=0 to 480 V
= 4.5 A
= 250 µA
D
GS
= 4.5 A
DS
= 8 A
= 0
= 0
GS
=0
Min.
Min.
600
Electrical characteristics
3
1370
Typ.
Typ.
3.75
0.65
156
7.8
37
90
50
10
25
oss
when V
Max.
Max.
0.75
±
4.5
70
50
10
1
DS
Unit
Unit
nC
nC
nC
µA
µA
µA
pF
pF
pF
pF
Ω
V
V
S
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