IRF3708PBF International Rectifier, IRF3708PBF Datasheet - Page 3

• Manufacturer Part Number: IRF3708PBF
• Description: MOSFET N-CH 30V 62A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3708PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 62A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2417pF @ 15V
• Power - Max: 87W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 13.5 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 62 A
• Power Dissipation: 87 W
• Mounting Style: Through Hole
• Gate Charge Qg: 24 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF3708PBF

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1000
1000
100
10
100
1
10
0.1
2.0
Fig 3. Typical Transfer Characteristics
Fig 1. Typical Output Characteristics
V
V DS , Drain-to-Source Voltage (V)
GS
T = 25 C
J
3.0
, Gate-to-Source Voltage (V)
1
°
20µs PULSE WIDTH
Tj = 25°C
4.0
2.7V
T = 175 C
J
V
20µs PULSE WIDTH
DS
10
= 15V
°
5.0
TOP
BOTTOM
10.0V
5.0V
4.5V
4.0V
3.5V
3.3V
3.0V
VGS
2.7V
6.0
100
1000
100
10
2.5
2.0
1.5
1.0
0.5
0.0
1
0.1
-60 -40 -20 0
Fig 4. Normalized On-Resistance
Fig 2. Typical Output Characteristics
I =
D
62A
IRF3708/S/LPbF
T , Junction Temperature ( C)
V DS , Drain-to-Source Voltage (V)
J
Vs. Temperature
20 40 60 80 100 120 140 160 180
1
20µs PULSE WIDTH
Tj = 175°C
2.7V
10
TOP
BOTTOM
V
°
GS
=
10V
10.0V
5.0V
4.5V
4.0V
3.5V
3.3V
3.0V
2.7V
VGS
3
100