IRF3708PBF International Rectifier, IRF3708PBF Datasheet - Page 6

• Manufacturer Part Number: IRF3708PBF
• Description: MOSFET N-CH 30V 62A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3708PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 62A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2417pF @ 15V
• Power - Max: 87W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 13.5 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 62 A
• Power Dissipation: 87 W
• Mounting Style: Through Hole
• Gate Charge Qg: 24 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF3708PBF

IRF3708/S/LPbF
I
AS
12V
0.025
0.020
0.015
0.010
0.005
Fig 15a&b. Unclamped Inductive Test circuit
V
6
GS
Fig 14a&b. Gate Charge Test Circuit
Same Type as D.U.T.
Current Regulator
.2µF
Fig 12. On-Resistance Vs. Drain Current
0
50KΩ
3mA
t p
Current Sampling Resistors
.3µF
I
G
50
V
VGS = 4.5V
(BR)DSS
D.U.T.
and Waveform
I
D
and Waveforms
I D , Drain Current ( A )
100
+
-
V
DS
V
R G
GS
150
20V
V DS
VGS = 10V
V
t p
G
Q
200
I AS
GS
D.U.T
0.01 Ω
L
Q
Charge
Q
GD
G
250
15V
DRIVER
300
+
- V DD
A
0.017
0.015
0.013
0.011
0.009
0.007
600
480
360
240
120
2.0
Fig 15c. Maximum Avalanche Energy
0
Fig 13. On-Resistance Vs. Gate Voltage
25
3.0
Starting T , Junction Temperature ( C)
V GS, Gate -to -Source Voltage (V)
50
4.0
Vs. Drain Current
J
5.0
75
6.0
100
I D = 31A
7.0
125
TOP
BOTTOM
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8.0
150
9.0
20.7A
24.8A
°
I D
10A
10.0
175