IRF3708PBF International Rectifier, IRF3708PBF Datasheet - Page 5

• Manufacturer Part Number: IRF3708PBF
• Description: MOSFET N-CH 30V 62A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3708PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 62A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2417pF @ 15V
• Power - Max: 87W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 13.5 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 62 A
• Power Dissipation: 87 W
• Mounting Style: Through Hole
• Gate Charge Qg: 24 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF3708PBF

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0.01
70
60
50
40
30
20
10
0.1
10
0.00001
0
1
25
Fig 9. Maximum Drain Current Vs.
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
D = 0.50
0.20
0.10
0.05
0.02
0.01
50
T , Case Temperature ( C)
Case Temperature
C
75
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
100
125
t , Rectangular Pulse Duration (sec)
°
1
150
0.001
175
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
V
90%
10%
V
0.01
DS
GS
1. Duty factor D = t / t
2. Peak T = P
t
Notes:
d(on)
IRF3708/S/LPbF
t
J
r
≤ 0.1 %
≤ 1
DM
x Z
1
0.1
thJC
P
2
DM
+ T
t
d(off)
C
t
1
t
2
t
f
+
-
1
5