IRF3708PBF International Rectifier, IRF3708PBF Datasheet - Page 4

• Manufacturer Part Number: IRF3708PBF
• Description: MOSFET N-CH 30V 62A TO-220AB
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF3708PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 62A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2417pF @ 15V
• Power - Max: 87W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 13.5 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 12 V
• Continuous Drain Current: 62 A
• Power Dissipation: 87 W
• Mounting Style: Through Hole
• Gate Charge Qg: 24 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: *IRF3708PBF

IRF3708/S/LPbF
4
3500
2800
2100
1400
1000
700
100
0.1
10
0
1
0.2
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
1
Drain-to-Source Voltage
T = 175 C
J
V
V
DS
SD
0.8
V
C
C
C
Forward Voltage
, Drain-to-Source Voltage (V)
,Source-to-Drain Voltage (V)
°
GS
iss
rss
oss
C oss
C rss
C iss
=
=
=
=
T = 25 C
0V,
C
C
C
J
gs
gd
ds
+ C
+ C
1.4
10
°
f = 1MHz
gd ,
gd
C
ds
2.0
SHORTED
V
GS
= 0 V
100
2.6
1000
100
10
10
1
8
6
4
2
0
0.1
Fig 8. Maximum Safe Operating Area
Fig 6. Typical Gate Charge Vs.
0
T
T
Single Pulse
I =
D
C
J
= 25 C
= 175 C
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
24.8A
V
DS
°
10
Q , Total Gate Charge (nC)
°
G
, Drain-to-Source Voltage (V)
1
20
BY R
DS(on)
V
DS
30
= 15V
10
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40
10us
100us
1ms
10ms
100
50