STF12NM60N STMicroelectronics, STF12NM60N Datasheet - Page 5

• Manufacturer Part Number: STF12NM60N
• Description: MOSFET N-CH 600V 10A TO-220FP
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STF12NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 410 mOhm @ 5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 10A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 30.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 960pF @ 50V
• Power - Max: 25W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7466-5; STF12NM60N

STB12NM60N/-1 - STF12NM60N - STP12NM60N - STW12NM60N
Table 6.
Table 7.
1. Pulse width limited by safe operating area
2.
Symbol
Symbol
I
SDM
V
t
t
I
I
d(on)
d(off)
Pulsed: pulse duration = 300µs, duty cycle 1.5%
RRM
RRM
I
SD
Q
Q
t
t
SD
t
t
r
f
rr
rr
rr
rr
(2)
(1)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Switching times
Source drain diode
Parameter
Parameter
V
R
(see Figure 17)
I
I
V
(see Figure 19)
V
di/dt =100A/µs, I
Tj = 150°C
SD
SD
DD
DD
DD
G
= 4.7Ω, V
=10A, di/dt =100A/µs,
= 10A, V
= 300V, I
= 100V
= 100V, Tj = 25°C
Test conditions
Test conditions
(see Figure 19)
GS
D
GS
=0
= 5A,
SD
= 10V
= 10A
Electrical characteristics
Min
Min
5.20
Typ
360
530
Typ
3.5
20
20
15
60
10
9
Max
Max Unit
1.3
10
40
Unit
µC
µC
ns
ns
ns
ns
ns
ns
A
A
V
A
A
5/18