STP20NK50Z STMicroelectronics, STP20NK50Z Datasheet - Page 10

• Manufacturer Part Number: STP20NK50Z
• Description: MOSFET N-CH 500V 17A TO-220
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STP20NK50Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 270 mOhm @ 8.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 4.5V @ 100µA
• Gate Charge (qg) @ Vgs: 119nC @ 10V
• Input Capacitance (ciss) @ Vds: 2600pF @ 25V
• Power - Max: 190W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.27 Ohms
• Forward Transconductance Gfs (max / Min): 13 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 17 A
• Power Dissipation: 190 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-7515-5; STP20NK50Z

Test circuits
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Figure 19. Switching times test circuit for
Figure 21. Test circuit for inductive load
Figure 23.
Test circuits
resistive load
switching and diode recovery times
Unclamped inductive waveform
Doc ID 9118 Rev 9
Figure 20. Gate charge test circuit
Figure 22. Unclamped inductive load test
Figure 24. Switching time waveform
circuit
STx20NK50Z