STW21NM60ND STMicroelectronics, STW21NM60ND Datasheet - Page 6

• Manufacturer Part Number: STW21NM60ND
• Description: MOSFET N-CH 600V 17A TO-247
• Manufacturer: STMicroelectronics
• Series: FDmesh™r

Specifications of STW21NM60ND

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 220 mOhm @ 8.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 1800pF @ 50V
• Power - Max: 140W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.22 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 17 A
• Power Dissipation: 140 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8453-5

Electrical characteristics
2.1
6/18
Figure 2.
Figure 4.
Figure 6.
Electrical characteristics (curves)
Safe operating area for TO-220 /
D²PAK / I²PAK
Safe operating area for TO-220FP
Safe operating area for TO-247
STP/F21NM60ND - STB21NM60ND - STI21NM60ND - STW21NM60ND
Figure 3.
Figure 5.
Figure 7.
Thermal impedance for TO-220 /
D²PAK / I²PAK
Thermal impedance for TO-220FP
Thermal impedance for TO-247