STF22NM60N STMicroelectronics, STF22NM60N Datasheet - Page 4

• Manufacturer Part Number: STF22NM60N
• Description: MOSFET N-CH 600V 16A TO-220FP
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STF22NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 220 mOhm @ 8A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 16A
• Vgs(th) (max) @ Id: 4V @ 100µA
• Gate Charge (qg) @ Vgs: 44nC @ 10V
• Input Capacitance (ciss) @ Vds: 1300pF @ 50V
• Power - Max: 30W
• Mounting Type: Through Hole
• Package / Case: TO-220FP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-10301-5

Electrical characteristics
2
4/23
Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 5.
Table 6.
1. C
C
V
Symbol
Symbol
R
V
oss eq.
(BR)DSS
increases from 0 to 80% V
C
I
I
C
DS(on)
C
Q
GS(th)
Q
GSS
DSS
Q
R
oss eq.
oss
iss
rss
gs
gd
g
g
(1)
is defined as a constant equivalent capacitance giving the same charging time as C
Input capacitance
Output capacitance
Reverse transfer
capacitance
Output equivalent
capacitance
Gate input resistance
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage V
Static drain-source on
resistance
On /off states
Dynamic
Parameter
Parameter
DS
= 0)
DS
GS
.
= 0)
Doc ID 15853 Rev 4
V
V
V
f=1 MHz open drain
V
V
(see Figure 18)
I
V
V
V
V
D
DS
GS
DS
DD
GS
DS
DS
GS
DS
GS
= 1 mA, V
= Max rating
= Max rating, T
= 50 V, f = 1 MHz,
= 0
= 0 to 480 V, V
= 10 V
= ± 25 V
= V
= 10 V, I
= 480 V, I
Test conditions
Test conditions
GS
, I
GS
D
D
D
= 250 µA
= 8 A
= 0
= 16 A,
GS
C
=125 °C
= 0
Min.
Min.
600
2
-
-
-
-
STB/F/I/P/W22NM60N
1330
Typ.
Typ.
181
4.6
4.7
0.2
84
44
25
3
6
oss
when V
Max.
Max.
0.22
100
100
1
4
-
-
-
-
DS
Unit
Unit
nC
nC
nC
µA
µA
nA
pF
pF
pF
pF
V
V
Ω
Ω