IRFP4568PBF International Rectifier, IRFP4568PBF Datasheet

MOSFET N-CH 150V 171A TO-247AC

IRFP4568PBF

Manufacturer Part Number
IRFP4568PBF
Description
MOSFET N-CH 150V 171A TO-247AC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRFP4568PBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
5.9 mOhm @ 103A, 10V
Drain To Source Voltage (vdss)
150V
Current - Continuous Drain (id) @ 25° C
171A
Vgs(th) (max) @ Id
5V @ 250µA
Gate Charge (qg) @ Vgs
227nC @ 10V
Input Capacitance (ciss) @ Vds
10470pF @ 50V
Power - Max
517W
Mounting Type
Through Hole
Package / Case
TO-247-3 (Straight Leads), TO-247AC
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
150 V
Gate-source Breakdown Voltage
30 V
Continuous Drain Current
171 A
Power Dissipation
517 W
Mounting Style
Through Hole
Gate Charge Qg
151 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRFP4568PBF
Manufacturer:
SIEMENS
Quantity:
101
Part Number:
IRFP4568PBF
Manufacturer:
IR
Quantity:
2 000
Part Number:
IRFP4568PBF
Manufacturer:
IR
Quantity:
20 000
Part Number:
IRFP4568PBF
0
Company:
Part Number:
IRFP4568PBF
Quantity:
1 200
Company:
Part Number:
IRFP4568PBF
Quantity:
12 000
www.irf.com
Applications
l
l
l
l
Benefits
l
l
l
l
Absolute Maximum Ratings
I
I
I
P
V
dv/dt
T
T
Avalanche Characteristics
E
I
E
Thermal Resistance
R
R
R
D
D
DM
AR
J
STG
D
GS
AS (Thermally limited)
AR
θJC
θCS
θJA
@ T
@ T
High Efficiency Synchronous Rectification in SMPS
Uninterruptible Power Supply
High Speed Power Switching
Hard Switched and High Frequency Circuits
Improved Gate, Avalanche and Dynamic dV/dt
Ruggedness
Fully Characterized Capacitance and Avalanche
Enhanced body diode dV/dt and dI/dt Capability
Lead-Free
SOA
@T
Symbol
Symbol
C
C
C
= 25°C
= 100°C
= 25°C
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
Mounting torque, 6-32 or M3 screw
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Junction-to-Case
Case-to-Sink, Flat Greased Surface
Junction-to-Ambient
Parameter
Parameter
j
Ã
ij
e
GS
GS
f
@ 10V (Silicon Limited)
@ 10V (Silicon Limited)
d
G
Gate
G
D
S
IRFP4568PbF
See Fig. 14, 15, 22a, 22b,
Typ.
0.24
–––
–––
V
R
I
D
DSS
DS(on)
10lb
(Silicon Limited)
-55 to + 175
D
IRFP4568PbF
x
in (1.1N
Drain
Max.
TO-247AC
HEXFET Power MOSFET
171
121
3.45
18.5
684
517
± 30
300
763
D
typ.
max.
x
m)
G
Max.
D
0.29
–––
40
S
Source
4.8m
5.9m
150V
171
S
Units
Units
°C/W
W/°C
V/ns
mJ
mJ
°C
96175
W
A
V
A
09/08/08
1

Related parts for IRFP4568PBF

IRFP4568PBF Summary of contents

Page 1

... IRFP4568PbF HEXFET Power MOSFET V 150V D DSS R typ. 4.8m DS(on) max. 5. (Silicon Limited TO-247AC IRFP4568PbF D Drain Source Max. 171 121 684 517 3.45 ± 30 18.5 - 175 300 x x 10lb in (1.1N m) 763 See Fig. 14, 15, 22a, 22b, Typ. Max. ––– ...

Page 2

... IRFP4568PbF Static @ T = 25°C (unless otherwise specified) J Symbol Parameter V Drain-to-Source Breakdown Voltage (BR)DSS ∆V /∆T Breakdown Voltage Temp. Coefficient (BR)DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) I Drain-to-Source Leakage Current DSS I Gate-to-Source Forward Leakage GSS Gate-to-Source Reverse Leakage R Internal Gate Resistance ...

Page 3

... C rss 100 Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage www.irf.com 10 100 MHZ 100 1000 Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage IRFP4568PbF 1000 VGS TOP 15V 10V 8.0V 7.0V 6.0V 5.5V 100 5.0V BOTTOM 4.5V 10 4.5V ≤ 60µs PULSE WIDTH Tj = 175° ...

Page 4

... IRFP4568PbF 1000 175° 25°C 100 10 1.0 0.2 0.4 0.6 0.8 1 Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage 180 160 140 120 100 100 Case Temperature (°C) Fig 9. Maximum Drain Current vs. Case Temperature 12.0 10.0 8.0 6.0 4.0 2.0 0.0 ...

Page 5

... I = Allowable avalanche current ∆T Allowable rise in junction temperature, not to exceed T = 25°C in Figure 14, 15). t Average time in avalanche Duty cycle in avalanche = t Z (D, t thJC av 125 150 175 IRFP4568PbF R τi (sec) Ri (°C/ 0.06336 0.000278 τ C τ 0.11088 0.005836 τ 3 τ 3 0.11484 ...

Page 6

... IRFP4568PbF 6.0 5.5 5.0 4.5 4.0 3.5 3 250µ 1.0mA 2 1.0A 2.0 1.5 1.0 -75 -50 - 100 125 150 175 Temperature ( °C ) Fig 16. Threshold Voltage vs. Temperature 103A 100V 25° 125° 200 400 di F /dt (A/µs) 6 600 800 1000 f 4000 103A 3600 ...

Page 7

... G + Voltage - Inductor Curent ® HEXFET Power MOSFETs 15V DRIVER + Fig 22b. Unclamped Inductive Waveforms D.U. IRFP4568PbF P.W. Period D = Period P.W. Waveform SD Body Diode Forward Current di/dt Waveform DS Diode Recovery dv/dt Body Diode Forward Drop Ripple ≤ 5% for N-Channel V (BR)DSS d(on) r Fig 23b ...

Page 8

... IRFP4568PbF TO-247AC package is not recommended for Surface Mount Application. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 8 5)3( Ã " C %ÃÃÃÃÃÃÃÃÃÃÃ & Data and specifications subject to change without notice. ...

Related keywords