IRFP4568PBF International Rectifier, IRFP4568PBF Datasheet - Page 2

• Manufacturer Part Number: IRFP4568PBF
• Description: MOSFET N-CH 150V 171A TO-247AC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFP4568PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.9 mOhm @ 103A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 171A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 227nC @ 10V
• Input Capacitance (ciss) @ Vds: 10470pF @ 50V
• Power - Max: 517W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 171 A
• Power Dissipation: 517 W
• Mounting Style: Through Hole
• Gate Charge Qg: 151 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRFP4568PbF
∆V
Notes:

‚
ƒ
Static @ T
V
R
V
I
I
R
Dynamic @ T
gfs
Q
Q
Q
Q
t
t
t
t
C
C
C
C
C
Diode Characteristics
I
I
V
t
Q
I
t
DSS
GSS
d(on)
r
d(off)
f
S
SM
rr
RRM
on
(BR)DSS
GS(th)
SD
DS(on)
G
iss
oss
rss
oss
oss
g
gs
gd
sync
rr
above this value.
Repetitive rating; pulse width limited by max. junction
temperature.
I
2
R
(BR)DSS
Limited by T
SD
Symbol
Symbol
Symbol
G
eff. (ER)
eff. (TR)
≤ 103A, di/dt ≤ 360A/µs, V
= 25Ω, I
/∆T
J
AS
J
Jmax
= 25°C (unless otherwise specified)
= 103A, V
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Internal Gate Resistance
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Q
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Forward Turn-On Time
J
, starting T
= 25°C (unless otherwise specified)
Parameter
GS
=10V. Part not recommended for use
J
= 25°C, L = 0.144mH
DD
Ù
≤ V
(BR)DSS
Parameter
Parameter
, T
J
≤ 175°C.
g
- Q
gd
)
g
„
…
†
‡
ˆ
as C
mended footprint and soldering techniques refer to application note #AN-994.
C
C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Pulse width ≤ 400µs; duty cycle ≤ 2%.
C
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
Min. Typ. Max. Units
Min. Typ. Max. Units
Min. Typ. Max. Units
oss
150
–––
–––
–––
–––
–––
–––
–––
162
–––
–––
–––
–––
–––
–––
–––
–––
––– 10470 –––
–––
–––
–––
––– 1272
–––
–––
–––
–––
–––
–––
–––
–––
θ
oss
3.0
oss
oss
eff. (ER) is a fixed capacitance that gives the same energy as
while V
eff. (TR) is a fixed capacitance that gives the same charging time
while V
0.17
–––
–––
–––
–––
–––
–––
–––
151
119
977
203
897
–––
–––
–––
110
133
515
758
4.8
1.0
8.8
52
55
96
27
47
84
DS
DS
is rising from 0 to 80% V
-100
–––
–––
250
100
–––
–––
227
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
171
684
–––
–––
–––
–––
–––
5.9
5.0
1.3
20
is rising from 0 to 80% V
V/°C
mΩ
nC
nC
µA
nA
pF
ns
ns
Ω
V
V
S
A
A
V
A
V
Reference to 25°C, I
V
V
V
V
V
V
V
I
V
V
I
V
I
R
V
V
V
ƒ = 1.0MHz, (See Fig 5)
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
T
T
T
T
D
D
D
GS
GS
DS
DS
DS
GS
GS
DS
DS
GS
DD
GS
GS
DS
GS
GS
J
J
J
J
J
J
G
= 103A
= 103A, V
=103A
= 25°C, I
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
=1.0Ω
= 0V, I
= 10V, I
= V
=150V, V
= 150V, V
= 20V
= -20V
= 50V, I
= 75V
= 10V
= 98V
= 10V
= 0V
= 50V
= 0V, V
= 0V, V
GS
DSS
, I
DSS
D
f
f
.
S
D
DS
DS
D
D
DS
= 250µA
.
= 250µA
= 103A, V
GS
= 103A
= 103A
GS
Conditions
Conditions
= 0V to 120V
= 0V to 120V
Conditions
=0V, V
= 0V
= 0V, T
V
I
di/dt = 100A/µs
F
R
= 103A
D
= 100V,
f
GS
= 5mA
GS
J
= 10V
= 125°C
= 0V
www.irf.com
G
g
™
(SeeFig.11)
f
f
f
S
D