IRFP4568PBF International Rectifier, IRFP4568PBF Datasheet - Page 4

• Manufacturer Part Number: IRFP4568PBF
• Description: MOSFET N-CH 150V 171A TO-247AC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFP4568PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.9 mOhm @ 103A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 171A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 227nC @ 10V
• Input Capacitance (ciss) @ Vds: 10470pF @ 50V
• Power - Max: 517W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 171 A
• Power Dissipation: 517 W
• Mounting Style: Through Hole
• Gate Charge Qg: 151 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRFP4568PbF
4
Fig 11. Typical C
1000
100
12.0
10.0
180
160
140
120
100
1.0
8.0
6.0
4.0
2.0
0.0
10
80
60
40
20
Fig 7. Typical Source-Drain Diode
Fig 9. Maximum Drain Current vs.
0
0.2
25
0
T J = 175°C
0.4
20
Case Temperature
V SD , Source-to-Drain Voltage (V)
50
V DS, Drain-to-Source Voltage (V)
Forward Voltage
T C , Case Temperature (°C)
0.6
40
OSS
75
0.8
60
Stored Energy
100
1.0
80
T J = 25°C
1.2
100 120 140 160
125
V GS = 0V
1.4
150
1.6
175
1.8
Fig 12. Maximum Avalanche Energy vs. DrainCurrent
10000
3500
3000
2500
2000
1500
1000
1000
500
100
190
185
180
175
170
165
160
155
150
145
140
0.1
10
0
1
Fig 10. Drain-to-Source Breakdown Voltage
Fig 8. Maximum Safe Operating Area
25
0.1
-60 -40 -20 0 20 40 60 80 100120140160180
Tc = 25°C
Tj = 175°C
Single Pulse
Id = 5mA
Starting T J , Junction Temperature (°C)
50
V DS , Drain-to-Source Voltage (V)
1
T J , Temperature ( °C )
OPERATION IN THIS AREA
LIMITED BY R DS (on)
75
DC
100
10
10msec
TOP
BOTTOM 103A
1msec
100µsec
125
100
I D
29.3A
21.5A
150
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175
1000