IRFP4568PBF International Rectifier, IRFP4568PBF Datasheet - Page 6

• Manufacturer Part Number: IRFP4568PBF
• Description: MOSFET N-CH 150V 171A TO-247AC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFP4568PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.9 mOhm @ 103A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 171A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 227nC @ 10V
• Input Capacitance (ciss) @ Vds: 10470pF @ 50V
• Power - Max: 517W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 171 A
• Power Dissipation: 517 W
• Mounting Style: Through Hole
• Gate Charge Qg: 151 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IRFP4568PbF
6
6.0
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
70
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10
Fig 16. Threshold Voltage vs. Temperature
0
-75 -50 -25
0
I F = 103A
V R = 100V
T J = 25°C
T J = 125°C
I D = 250µA
I D = 1.0mA
ID = 1.0A
200
T J , Temperature ( °C )
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400
di F /dt (A/µs)
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0
I F = 103A
V R = 100V
T J = 25°C
T J = 125°C
1000
f
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di F /dt (A/µs)
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3600
3200
2800
2400
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0
0
f
0
I F = 68A
V R = 100V
T J = 25°C
T J = 125°C
I F = 68A
V R = 100V
T J = 25°C
T J = 125°C
1000
200
200
400
di F /dt (A/µs)
400
di F /dt (A/µs)
600
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f
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1000
f