IRFP4568PBF International Rectifier, IRFP4568PBF Datasheet - Page 5

• Manufacturer Part Number: IRFP4568PBF
• Description: MOSFET N-CH 150V 171A TO-247AC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFP4568PBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5.9 mOhm @ 103A, 10V
• Drain To Source Voltage (vdss): 150V
• Current - Continuous Drain (id) @ 25° C: 171A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 227nC @ 10V
• Input Capacitance (ciss) @ Vds: 10470pF @ 50V
• Power - Max: 517W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads), TO-247AC
• Transistor Polarity: N-Channel
• Drain-source Breakdown Voltage: 150 V
• Gate-source Breakdown Voltage: 30 V
• Continuous Drain Current: 171 A
• Power Dissipation: 517 W
• Mounting Style: Through Hole
• Gate Charge Qg: 151 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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Fig 15. Maximum Avalanche Energy vs. Temperature
0.0001
0.001
1000
0.01
900
800
700
600
500
400
300
200
100
0.1
100
0.1
10
1E-006
1
1.0E-06
0
1
25
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Τ j = 25°C and
Tstart = 150°C.
Starting T J , Junction Temperature (°C)
50
Duty Cycle = Single Pulse
D = 0.50
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
0.02
TOP
BOTTOM 1.0% Duty Cycle
I D = 103A
0.05
0.10
0.01
75
0.10
0.20
0.05
0.01
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
1.0E-05
100
Single Pulse
125
Fig 14. Typical Avalanche Current vs.Pulsewidth
150
t 1 , Rectangular Pulse Duration (sec)
1.0E-04
0.0001
175
τ
J
tav (sec)
τ
J
τ
1
Ci= τi/Ri
τ
1
Ci
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
2. Safe operation in Avalanche is allowed as long asT
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. P
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
6. I
7. ∆T
i/Ri
R
1
R
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of T
during avalanche).
25°C in Figure 14, 15).
t
D = Duty cycle in avalanche = t
Z
av
av =
1
thJC
D (ave)
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ∆Tj = 150°C and
Tstart =25°C (Single Pulse)
1.0E-03
0.001
= Allowable avalanche current.
=
Average time in avalanche.
τ
(D, t
Allowable rise in junction temperature, not to exceed T
2
τ
R
2
2
R
= Average power dissipation per single avalanche pulse.
av
2
) = Transient thermal resistance, see Figures 13)
jmax
R
τ
3
3
R
τ
. This is validated for every part type.
3
3
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
τ
P
C
τ
D (ave)
Ri (°C/W)
0.06336
0.11088
0.11484
1.0E-02
0.01
= 1/2 ( 1.3·BV·I
I
E
av
AS (AR)
= 2DT/ [1.3·BV·Z
av
0.000278
0.005836
0.053606
·f
τi (sec)
= P
D (ave)
av
) = DT/ Z
·t
th
av
1.0E-01
IRFP4568PbF
]
0.1
jmax
thJC
jmax
is not exceeded.
(assumed as
5