IPD060N03LG Infineon Technologies, IPD060N03LG Datasheet - Page 6

MOSFET N-CH 30V 50A TO252-3

IPD060N03LG

Manufacturer Part Number
IPD060N03LG
Description
MOSFET N-CH 30V 50A TO252-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of IPD060N03LG

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
2.2V @ 250µA
Gate Charge (qg) @ Vgs
23nC @ 10V
Input Capacitance (ciss) @ Vds
2400pF @ 15V
Power - Max
56W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IPD060N03LGINTR
IPD060N03LGXT
SP000236948

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPD060N03LG
Manufacturer:
Infineon Technologies
Quantity:
135
Part Number:
IPD060N03LG
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
IPD060N03LG
0
Company:
Part Number:
IPD060N03LG
Quantity:
183
Rev. 1.03
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
10
10
12
10
4
3
2
1
DS
=f(T
8
6
4
2
0
10000
1000
100
0
10
-60
); V
j
); I
GS
D
5
-20
=0 V; f =1 MHz
=30 A; V
98 %
10
20
GS
V
=10 V
T
DS
j
15
60
[°C]
typ
Coss
Ciss
[V]
Crss
100
20
140
25
180
page 6
30
10 Typ. gate threshold voltage
V
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
1000
100
2.5
1.5
0.5
10
=f(T
SD
2
1
0
1
-60
0.0
)
j
); V
j
IPS060N03L G
IPD060N03L G
GS
-20
=V
0.5
175 °C
DS
20
; I
D
=250 µA
V
T
25 °C
SD
j
1.0
60
[°C]
[V]
25 °C, 98%
100
IPU060N03L G
IPF060N03L G
1.5
140
175 °C, 98%
2008-04-15
180
2.0

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