BSP250,115 NXP Semiconductors, BSP250,115 Datasheet - Page 11

• Manufacturer Part Number: BSP250,115
• Description: MOSFET P-CH 30V 3A SOT223
• Manufacturer: NXP Semiconductors

Specifications of BSP250,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Mounting Type: Surface Mount
• Power - Max: 1.65W
• Fet Type: MOSFET P-Channel, Metal Oxide
• Gate Charge (qg) @ Vgs: 25nC @ 10V
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Current - Continuous Drain (id) @ 25° C: 3A
• Drain To Source Voltage (vdss): 30V
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 250 mOhm @ 1A, 10V
• Minimum Operating Temperature: - 65 C
• Configuration: Single Dual Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.25 Ohm @ 10 V
• Gate Charge Qg: 10 nC
• Forward Transconductance Gfs (max / Min): 2 S, 1 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 3 A
• Power Dissipation: 1650 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934033450115::BSP250 T/R::BSP250 T/R

Philips Semiconductors
1997 Jun 20
P-channel enhancement mode vertical
D-MOS transistor
NOTES
11
Product specification
BSP250