IRFH7923TRPBF International Rectifier, IRFH7923TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRFH7923TRPBF
• Description: MOSFET N-CH 30V 15A PQFN56
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFH7923TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.7 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 2.35V @ 25µA
• Gate Charge (qg) @ Vgs: 13nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1095pF @ 15V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: 8-PQFN, 8-PowerQFN
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 15A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 6.8mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.8V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFH7923TRPBFCT

4
1000
10000
1.00
0.10
100
1000
10
100
10
Fig 5. Typical Capacitance Vs.
0.2
Fig 7. Typical Source-Drain Diode
1
Drain-to-Source Voltage
T J = 150°C
0.4
V SD , Source-to-Drain Voltage (V)
V DS , Drain-to-Source Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
Forward Voltage
0.6
C oss
C iss
C rss
T J = 25°C
0.8
f = 1 MHZ
10
1.0
V GS = 0V
1.2
100
1000
14.0
12.0
10.0
100
0.1
8.0
6.0
4.0
2.0
0.0
10
1
Fig 8. Maximum Safe Operating Area
0
0
Fig 6. Typical Gate Charge Vs.
I D = 12A
T A = 25°C
Tj = 150°C
Single Pulse
Gate-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
5
Q G , Total Gate Charge (nC)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
1
V DS = 24V
V DS = 15V
10
1msec
10msec
100µsec
15
10
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20
100
25