IRFH7923TRPBF International Rectifier, IRFH7923TRPBF Datasheet - Page 7
IRFH7923TRPBF
Manufacturer Part Number
IRFH7923TRPBF
Description
MOSFET N-CH 30V 15A PQFN56
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet
1.IRFH7923TRPBF.pdf
(9 pages)
Specifications of IRFH7923TRPBF
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8.7 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
15A
Vgs(th) (max) @ Id
2.35V @ 25µA
Gate Charge (qg) @ Vgs
13nC @ 4.5V
Input Capacitance (ciss) @ Vds
1095pF @ 15V
Power - Max
3.1W
Mounting Type
Surface Mount
Package / Case
8-PQFN, 8-PowerQFN
Transistor Polarity
N Channel
Continuous Drain Current Id
15A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
6.8mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1.8V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRFH7923TRPBFCT
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRFH7923TRPBF
Manufacturer:
TOS
Quantity:
3 192
www.irf.com
Fig 17. Gate Charge Test Circuit
+
-
12V
V
GS
Same Type as D.U.T.
D.U.T
Current Regulator
.2µF
50KΩ
3mA
Fig 16.
+
-
•
•
•
•
Current Sampling Resistors
SD
.3µF
•
•
•
I
G
-
G
D.U.T.
I
HEXFET
D
+
+
-
V
DS
®
+
Power MOSFETs
-
Re-Applied
Voltage
Reverse
Recovery
Current
Vgs(th)
Qgs1 Qgs2
Vds
Driver Gate Drive
D.U.T. I
D.U.T. V
Inductor Curent
Fig 18. Gate Charge Waveform
P.W.
SD
DS
Waveform
Waveform
for N-Channel
Ripple ≤ 5%
Body Diode
Qgd
Period
Body Diode Forward
Diode Recovery
Current
dv/dt
Forward Drop
di/dt
Qgodr
D =
Period
P.W.
Vgs
V
V
I
SD
GS
DD
=10V
7
Id