IRFH7923TRPBF International Rectifier, IRFH7923TRPBF Datasheet - Page 6

• Manufacturer Part Number: IRFH7923TRPBF
• Description: MOSFET N-CH 30V 15A PQFN56
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFH7923TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 8.7 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 2.35V @ 25µA
• Gate Charge (qg) @ Vgs: 13nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 1095pF @ 15V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: 8-PQFN, 8-PowerQFN
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 15A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 6.8mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 1.8V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRFH7923TRPBFCT

Fig 14a. Unclamped Inductive Test Circuit
Fig 14b. Unclamped Inductive Waveforms
6
25
20
15
10
Fig 12. On-Resistance vs. Gate Voltage
I
5
AS
2
R G
20V
V DS
4
V GS, Gate -to -Source Voltage (V)
t p
6
I AS
t p
D.U.T
8
0.01 Ω
L
10
12
T J = 25°C
V
(BR)DSS
T J = 125°C
15V
14
DRIVER
16
I D = 15A
+
-
V DD
18
A
20
120
100
80
60
40
20
0
25
90%
V
10%
Fig 15a. Switching Time Test Circuit
Fig 15b. Switching Time Waveforms
V
DS
GS
Starting T J , Junction Temperature (°C)
Fig 13. Maximum Avalanche Energy
50
t
d(on)
≤ 0.1
≤ 1
75
t
r
vs. Drain Current
100
TOP
BOTTOM 12.0A
t
d(off)
125
www.irf.com
2.32A
3.30A
I D
t
f
+
-
150